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IRG4PH50SPBF
IRG4PH50SPBF -
Pwr MOSFET, 1200V DC-1 KHz (Std.) Discrete IGBT TO-247AC
聲明:圖片僅供參考,請以實物為準(zhǔn)!
制造商:
International Rectifier
International Rectifier
制造商產(chǎn)品編號:
IRG4PH50SPBF
倉庫庫存編號:
70017521
技術(shù)數(shù)據(jù)表:
Datasheet
訂購熱線:
400-900-3095 0755-21000796, QQ:
800152669
, Email:
sales@szcwdz.com
由于產(chǎn)品數(shù)據(jù)庫龐大,部分產(chǎn)品信息可能未能及時更新,下單前請與銷售人員確認(rèn)好實時在庫數(shù)量,謝謝合作!
IRG4PH50SPBF產(chǎn)品概述
Single IGBT over 21A, Infineon
optimized IGBTs designed for medium frequency applications with fast response and provide the user with the highest efficiency available. utilizing FRED diodes optimized to provide the best performance with IGBT's
IRG4PH50SPBF產(chǎn)品信息
Capacitance, Input
3600 pF
Channel Mode
Enhancement
Channel Type
N
Configuration
Single
Current, Collector
57 A
Current, Drain
57 A
Dimensions
15.87 X 5.31 x 20.70 mm
Energy Rating
270 mJ
Height
0.815" (20.7mm)
Length
0.625" <5/8> (15.875mm)
Mounting Type
Through Hole
Number of Elements per Chip
1
Number of Pins
3
Package Type
TO-247AC
Polarity
N-Channel
Power Dissipation
200 W
Resistance, Thermal, Junction to Case
0.64 °C/W
Speed, Switching
<1 kHz
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
-55 °C
Temperature, Operating, Range
-55 to +150 °C
Time, Turn-Off Delay
1170 ns
Time, Turn-On Delay
32 ns
Transconductance, Forward
40 S
Typical Gate Charge @ Vgs
167 nC @ 15 V
Voltage, Collector to Emitter Shorted
1200 V
Voltage, Collector to Emitter, Saturation
1.75 V
Voltage, Drain to Source
1200 V
Voltage, Gate to Source
±30 V
Width
0.209" (5.31mm)
關(guān)鍵詞
IRG4PH50SPBF客戶還搜索了
參考圖片
制造商 / 說明 / 型號 / 倉庫庫存編號
PDF
操作
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型號:
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倉庫庫存編號:
70083642
搜索
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Capacitor; Tantalum; 1uF; Tap Series; Radial; Case A; 10%; 35V; 46VDC; 8 Ohms ESR
型號:
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倉庫庫存編號:
70195930
搜索
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Econ Power Series, 7.92mm Pitch 3Way 1 Row Straight PCB Header, Solder Term, 7.5A
型號:
1-1318301-2
倉庫庫存編號:
70346364
搜索
IRG4PH50SPBF相關(guān)搜索
Capacitance, Input 3600 pF
International Rectifier Capacitance, Input 3600 pF
MOSFET Transistors Capacitance, Input 3600 pF
International Rectifier MOSFET Transistors Capacitance, Input 3600 pF
Channel Mode Enhancement
International Rectifier Channel Mode Enhancement
MOSFET Transistors Channel Mode Enhancement
International Rectifier MOSFET Transistors Channel Mode Enhancement
Channel Type N
International Rectifier Channel Type N
MOSFET Transistors Channel Type N
International Rectifier MOSFET Transistors Channel Type N
Configuration Single
International Rectifier Configuration Single
MOSFET Transistors Configuration Single
International Rectifier MOSFET Transistors Configuration Single
Current, Collector 57 A
International Rectifier Current, Collector 57 A
MOSFET Transistors Current, Collector 57 A
International Rectifier MOSFET Transistors Current, Collector 57 A
Current, Drain 57 A
International Rectifier Current, Drain 57 A
MOSFET Transistors Current, Drain 57 A
International Rectifier MOSFET Transistors Current, Drain 57 A
Dimensions 15.87 X 5.31 x 20.70 mm
International Rectifier Dimensions 15.87 X 5.31 x 20.70 mm
MOSFET Transistors Dimensions 15.87 X 5.31 x 20.70 mm
International Rectifier MOSFET Transistors Dimensions 15.87 X 5.31 x 20.70 mm
Energy Rating 270 mJ
International Rectifier Energy Rating 270 mJ
MOSFET Transistors Energy Rating 270 mJ
International Rectifier MOSFET Transistors Energy Rating 270 mJ
Height 0.815" (20.7mm)
International Rectifier Height 0.815" (20.7mm)
MOSFET Transistors Height 0.815" (20.7mm)
International Rectifier MOSFET Transistors Height 0.815" (20.7mm)
Length 0.625" <5/8> (15.875mm)
International Rectifier Length 0.625" <5/8> (15.875mm)
MOSFET Transistors Length 0.625" <5/8> (15.875mm)
International Rectifier MOSFET Transistors Length 0.625" <5/8> (15.875mm)
Mounting Type Through Hole
International Rectifier Mounting Type Through Hole
MOSFET Transistors Mounting Type Through Hole
International Rectifier MOSFET Transistors Mounting Type Through Hole
Number of Elements per Chip 1
International Rectifier Number of Elements per Chip 1
MOSFET Transistors Number of Elements per Chip 1
International Rectifier MOSFET Transistors Number of Elements per Chip 1
Number of Pins 3
International Rectifier Number of Pins 3
MOSFET Transistors Number of Pins 3
International Rectifier MOSFET Transistors Number of Pins 3
Package Type TO-247AC
International Rectifier Package Type TO-247AC
MOSFET Transistors Package Type TO-247AC
International Rectifier MOSFET Transistors Package Type TO-247AC
Polarity N-Channel
International Rectifier Polarity N-Channel
MOSFET Transistors Polarity N-Channel
International Rectifier MOSFET Transistors Polarity N-Channel
Power Dissipation 200 W
International Rectifier Power Dissipation 200 W
MOSFET Transistors Power Dissipation 200 W
International Rectifier MOSFET Transistors Power Dissipation 200 W
Resistance, Thermal, Junction to Case 0.64 °C/W
International Rectifier Resistance, Thermal, Junction to Case 0.64 °C/W
MOSFET Transistors Resistance, Thermal, Junction to Case 0.64 °C/W
International Rectifier MOSFET Transistors Resistance, Thermal, Junction to Case 0.64 °C/W
Speed, Switching <1 kHz
International Rectifier Speed, Switching <1 kHz
MOSFET Transistors Speed, Switching <1 kHz
International Rectifier MOSFET Transistors Speed, Switching <1 kHz
Temperature, Operating, Maximum +150 °C
International Rectifier Temperature, Operating, Maximum +150 °C
MOSFET Transistors Temperature, Operating, Maximum +150 °C
International Rectifier MOSFET Transistors Temperature, Operating, Maximum +150 °C
Temperature, Operating, Minimum -55 °C
International Rectifier Temperature, Operating, Minimum -55 °C
MOSFET Transistors Temperature, Operating, Minimum -55 °C
International Rectifier MOSFET Transistors Temperature, Operating, Minimum -55 °C
Temperature, Operating, Range -55 to +150 °C
International Rectifier Temperature, Operating, Range -55 to +150 °C
MOSFET Transistors Temperature, Operating, Range -55 to +150 °C
International Rectifier MOSFET Transistors Temperature, Operating, Range -55 to +150 °C
Time, Turn-Off Delay 1170 ns
International Rectifier Time, Turn-Off Delay 1170 ns
MOSFET Transistors Time, Turn-Off Delay 1170 ns
International Rectifier MOSFET Transistors Time, Turn-Off Delay 1170 ns
Time, Turn-On Delay 32 ns
International Rectifier Time, Turn-On Delay 32 ns
MOSFET Transistors Time, Turn-On Delay 32 ns
International Rectifier MOSFET Transistors Time, Turn-On Delay 32 ns
Transconductance, Forward 40 S
International Rectifier Transconductance, Forward 40 S
MOSFET Transistors Transconductance, Forward 40 S
International Rectifier MOSFET Transistors Transconductance, Forward 40 S
Typical Gate Charge @ Vgs 167 nC @ 15 V
International Rectifier Typical Gate Charge @ Vgs 167 nC @ 15 V
MOSFET Transistors Typical Gate Charge @ Vgs 167 nC @ 15 V
International Rectifier MOSFET Transistors Typical Gate Charge @ Vgs 167 nC @ 15 V
Voltage, Collector to Emitter Shorted 1200 V
International Rectifier Voltage, Collector to Emitter Shorted 1200 V
MOSFET Transistors Voltage, Collector to Emitter Shorted 1200 V
International Rectifier MOSFET Transistors Voltage, Collector to Emitter Shorted 1200 V
Voltage, Collector to Emitter, Saturation 1.75 V
International Rectifier Voltage, Collector to Emitter, Saturation 1.75 V
MOSFET Transistors Voltage, Collector to Emitter, Saturation 1.75 V
International Rectifier MOSFET Transistors Voltage, Collector to Emitter, Saturation 1.75 V
Voltage, Drain to Source 1200 V
International Rectifier Voltage, Drain to Source 1200 V
MOSFET Transistors Voltage, Drain to Source 1200 V
International Rectifier MOSFET Transistors Voltage, Drain to Source 1200 V
Voltage, Gate to Source ±30 V
International Rectifier Voltage, Gate to Source ±30 V
MOSFET Transistors Voltage, Gate to Source ±30 V
International Rectifier MOSFET Transistors Voltage, Gate to Source ±30 V
Width 0.209" (5.31mm)
International Rectifier Width 0.209" (5.31mm)
MOSFET Transistors Width 0.209" (5.31mm)
International Rectifier MOSFET Transistors Width 0.209" (5.31mm)
郵箱:
sales@szcwdz.com
Q Q:
800152669
手機網(wǎng)站:
m.szcwdz.com
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