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IRG4PF50WPBF
IRG4PF50WPBF -
900V WARP 20-100 KHZ DISCRETE IGBT IN ATO-247AC PACKAGE
聲明:圖片僅供參考,請(qǐng)以實(shí)物為準(zhǔn)!
制造商:
International Rectifier
International Rectifier
制造商產(chǎn)品編號(hào):
IRG4PF50WPBF
倉庫庫存編號(hào):
70017078
技術(shù)數(shù)據(jù)表:
Datasheet
訂購熱線:
400-900-3095 0755-21000796, QQ:
800152669
, Email:
sales@szcwdz.com
由于產(chǎn)品數(shù)據(jù)庫龐大,部分產(chǎn)品信息可能未能及時(shí)更新,下單前請(qǐng)與銷售人員確認(rèn)好實(shí)時(shí)在庫數(shù)量,謝謝合作!
IRG4PF50WPBF產(chǎn)品概述
Single IGBT over 21A, Infineon
optimized IGBTs designed for medium frequency applications with fast response and provide the user with the highest efficiency available. utilizing FRED diodes optimized to provide the best performance with IGBT's
IRG4PF50WPBF產(chǎn)品信息
Capacitance, Gate
3300 pF
Channel Type
N
Configuration
Dual
Current, Collector
51 A
Current, Continuous Collector
51 A
Dimensions
15.87 x 5.31 x 20.70 mm
Energy Rating
186 mJ
Height
0.815" (20.7mm)
Length
0.625" <5/8> (15.875mm)
Mounting Type
Through Hole
Number of Pins
3
Package Type
TO-247AC
Polarity
N-Channel
Power Dissipation
200 W
Resistance, Thermal, Junction to Case
0.64 °C/W
Speed, Switching
30-150 Khz
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
-55 °C
Temperature, Operating, Range
-55 to +150 °C
Transistor Type
NPN
Type
Warp
Voltage, Collector to Emitter
2.7 V
Voltage, Collector to Emitter Shorted
900 V
Voltage, Gate to Emitter
±20 V
Width
0.209" (5.31mm)
關(guān)鍵詞
IRG4PF50WPBF客戶還搜索了
參考圖片
制造商 / 說明 / 型號(hào) / 倉庫庫存編號(hào)
PDF
操作
International Rectifier
900V WARP 20-100 KHZ COPACK IGBT IN A TO-247AC PACKAGE
型號(hào):
IRG4PF50WDPBF
倉庫庫存編號(hào):
70017503
搜索
IRG4PF50WPBF相關(guān)搜索
Capacitance, Gate 3300 pF
International Rectifier Capacitance, Gate 3300 pF
IGBT Transistors Capacitance, Gate 3300 pF
International Rectifier IGBT Transistors Capacitance, Gate 3300 pF
Channel Type N
International Rectifier Channel Type N
IGBT Transistors Channel Type N
International Rectifier IGBT Transistors Channel Type N
Configuration Dual
International Rectifier Configuration Dual
IGBT Transistors Configuration Dual
International Rectifier IGBT Transistors Configuration Dual
Current, Collector 51 A
International Rectifier Current, Collector 51 A
IGBT Transistors Current, Collector 51 A
International Rectifier IGBT Transistors Current, Collector 51 A
Current, Continuous Collector 51 A
International Rectifier Current, Continuous Collector 51 A
IGBT Transistors Current, Continuous Collector 51 A
International Rectifier IGBT Transistors Current, Continuous Collector 51 A
Dimensions 15.87 x 5.31 x 20.70 mm
International Rectifier Dimensions 15.87 x 5.31 x 20.70 mm
IGBT Transistors Dimensions 15.87 x 5.31 x 20.70 mm
International Rectifier IGBT Transistors Dimensions 15.87 x 5.31 x 20.70 mm
Energy Rating 186 mJ
International Rectifier Energy Rating 186 mJ
IGBT Transistors Energy Rating 186 mJ
International Rectifier IGBT Transistors Energy Rating 186 mJ
Height 0.815" (20.7mm)
International Rectifier Height 0.815" (20.7mm)
IGBT Transistors Height 0.815" (20.7mm)
International Rectifier IGBT Transistors Height 0.815" (20.7mm)
Length 0.625" <5/8> (15.875mm)
International Rectifier Length 0.625" <5/8> (15.875mm)
IGBT Transistors Length 0.625" <5/8> (15.875mm)
International Rectifier IGBT Transistors Length 0.625" <5/8> (15.875mm)
Mounting Type Through Hole
International Rectifier Mounting Type Through Hole
IGBT Transistors Mounting Type Through Hole
International Rectifier IGBT Transistors Mounting Type Through Hole
Number of Pins 3
International Rectifier Number of Pins 3
IGBT Transistors Number of Pins 3
International Rectifier IGBT Transistors Number of Pins 3
Package Type TO-247AC
International Rectifier Package Type TO-247AC
IGBT Transistors Package Type TO-247AC
International Rectifier IGBT Transistors Package Type TO-247AC
Polarity N-Channel
International Rectifier Polarity N-Channel
IGBT Transistors Polarity N-Channel
International Rectifier IGBT Transistors Polarity N-Channel
Power Dissipation 200 W
International Rectifier Power Dissipation 200 W
IGBT Transistors Power Dissipation 200 W
International Rectifier IGBT Transistors Power Dissipation 200 W
Resistance, Thermal, Junction to Case 0.64 °C/W
International Rectifier Resistance, Thermal, Junction to Case 0.64 °C/W
IGBT Transistors Resistance, Thermal, Junction to Case 0.64 °C/W
International Rectifier IGBT Transistors Resistance, Thermal, Junction to Case 0.64 °C/W
Speed, Switching 30-150 Khz
International Rectifier Speed, Switching 30-150 Khz
IGBT Transistors Speed, Switching 30-150 Khz
International Rectifier IGBT Transistors Speed, Switching 30-150 Khz
Temperature, Operating, Maximum +150 °C
International Rectifier Temperature, Operating, Maximum +150 °C
IGBT Transistors Temperature, Operating, Maximum +150 °C
International Rectifier IGBT Transistors Temperature, Operating, Maximum +150 °C
Temperature, Operating, Minimum -55 °C
International Rectifier Temperature, Operating, Minimum -55 °C
IGBT Transistors Temperature, Operating, Minimum -55 °C
International Rectifier IGBT Transistors Temperature, Operating, Minimum -55 °C
Temperature, Operating, Range -55 to +150 °C
International Rectifier Temperature, Operating, Range -55 to +150 °C
IGBT Transistors Temperature, Operating, Range -55 to +150 °C
International Rectifier IGBT Transistors Temperature, Operating, Range -55 to +150 °C
Transistor Type NPN
International Rectifier Transistor Type NPN
IGBT Transistors Transistor Type NPN
International Rectifier IGBT Transistors Transistor Type NPN
Type Warp
International Rectifier Type Warp
IGBT Transistors Type Warp
International Rectifier IGBT Transistors Type Warp
Voltage, Collector to Emitter 2.7 V
International Rectifier Voltage, Collector to Emitter 2.7 V
IGBT Transistors Voltage, Collector to Emitter 2.7 V
International Rectifier IGBT Transistors Voltage, Collector to Emitter 2.7 V
Voltage, Collector to Emitter Shorted 900 V
International Rectifier Voltage, Collector to Emitter Shorted 900 V
IGBT Transistors Voltage, Collector to Emitter Shorted 900 V
International Rectifier IGBT Transistors Voltage, Collector to Emitter Shorted 900 V
Voltage, Gate to Emitter ±20 V
International Rectifier Voltage, Gate to Emitter ±20 V
IGBT Transistors Voltage, Gate to Emitter ±20 V
International Rectifier IGBT Transistors Voltage, Gate to Emitter ±20 V
Width 0.209" (5.31mm)
International Rectifier Width 0.209" (5.31mm)
IGBT Transistors Width 0.209" (5.31mm)
International Rectifier IGBT Transistors Width 0.209" (5.31mm)
郵箱:
sales@szcwdz.com
Q Q:
800152669
手機(jī)網(wǎng)站:
m.szcwdz.com
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