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IRG4PC50FPBF - 

600V FAST 1-8 KHZ DISCRETE IGBT IN A TO-247AC PACKAGE

International Rectifier IRG4PC50FPBF
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制造商產(chǎn)品編號:
IRG4PC50FPBF
倉庫庫存編號:
70017072
技術(shù)數(shù)據(jù)表:
View IRG4PC50FPBF Datasheet Datasheet
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IRG4PC50FPBF產(chǎn)品概述

Single IGBT over 21A, Infineon
optimized IGBTs designed for medium frequency applications with fast response and provide the user with the highest efficiency available. utilizing FRED diodes optimized to provide the best performance with IGBT's

IRG4PC50FPBF產(chǎn)品信息

  Capacitance, Gate  4100 pF  
  Channel Type  N  
  Configuration  Single  
  Current, Collector  70 A  
  Current, Continuous Collector  70 A  
  Dimensions  15.87 X 5.31 X 20.70 mm  
  Energy Rating  20 mJ  
  Height  0.815" (20.7mm)  
  Length  0.625" <5/8> (15.875mm)  
  Mounting Type  Through Hole  
  Number of Pins  3  
  Package Type  TO-247AC  
  Polarity  N-Channel  
  Power Dissipation  200 W  
  Resistance, Thermal, Junction to Case  0.64 °C/W  
  Speed, Switching  1 to 5 (Hard Switching), <special id="6"/>special id="80"/>20 (Resonant Mode) kHz  
  Temperature, Operating, Maximum  +150 °C  
  Temperature, Operating, Minimum  -55 °C  
  Temperature, Operating, Range  -55 to +150 °C  
  Type  Fast  
  Voltage, Collector to Emitter  600 V  
  Voltage, Collector to Emitter Shorted  600 V  
  Voltage, Gate to Emitter  ±20 V  
  Width  0.209" (5.31mm)  
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IRG4PC50FPBF相關(guān)搜索

Capacitance, Gate 4100 pF  International Rectifier Capacitance, Gate 4100 pF  IGBT Transistors Capacitance, Gate 4100 pF  International Rectifier IGBT Transistors Capacitance, Gate 4100 pF   Channel Type N  International Rectifier Channel Type N  IGBT Transistors Channel Type N  International Rectifier IGBT Transistors Channel Type N   Configuration Single  International Rectifier Configuration Single  IGBT Transistors Configuration Single  International Rectifier IGBT Transistors Configuration Single   Current, Collector 70 A  International Rectifier Current, Collector 70 A  IGBT Transistors Current, Collector 70 A  International Rectifier IGBT Transistors Current, Collector 70 A   Current, Continuous Collector 70 A  International Rectifier Current, Continuous Collector 70 A  IGBT Transistors Current, Continuous Collector 70 A  International Rectifier IGBT Transistors Current, Continuous Collector 70 A   Dimensions 15.87 X 5.31 X 20.70 mm  International Rectifier Dimensions 15.87 X 5.31 X 20.70 mm  IGBT Transistors Dimensions 15.87 X 5.31 X 20.70 mm  International Rectifier IGBT Transistors Dimensions 15.87 X 5.31 X 20.70 mm   Energy Rating 20 mJ  International Rectifier Energy Rating 20 mJ  IGBT Transistors Energy Rating 20 mJ  International Rectifier IGBT Transistors Energy Rating 20 mJ   Height 0.815" (20.7mm)  International Rectifier Height 0.815" (20.7mm)  IGBT Transistors Height 0.815" (20.7mm)  International Rectifier IGBT Transistors Height 0.815" (20.7mm)   Length 0.625" <5/8> (15.875mm)  International Rectifier Length 0.625" <5/8> (15.875mm)  IGBT Transistors Length 0.625" <5/8> (15.875mm)  International Rectifier IGBT Transistors Length 0.625" <5/8> (15.875mm)   Mounting Type Through Hole  International Rectifier Mounting Type Through Hole  IGBT Transistors Mounting Type Through Hole  International Rectifier IGBT Transistors Mounting Type Through Hole   Number of Pins 3  International Rectifier Number of Pins 3  IGBT Transistors Number of Pins 3  International Rectifier IGBT Transistors Number of Pins 3   Package Type TO-247AC  International Rectifier Package Type TO-247AC  IGBT Transistors Package Type TO-247AC  International Rectifier IGBT Transistors Package Type TO-247AC   Polarity N-Channel  International Rectifier Polarity N-Channel  IGBT Transistors Polarity N-Channel  International Rectifier IGBT Transistors Polarity N-Channel   Power Dissipation 200 W  International Rectifier Power Dissipation 200 W  IGBT Transistors Power Dissipation 200 W  International Rectifier IGBT Transistors Power Dissipation 200 W   Resistance, Thermal, Junction to Case 0.64 °C/W  International Rectifier Resistance, Thermal, Junction to Case 0.64 °C/W  IGBT Transistors Resistance, Thermal, Junction to Case 0.64 °C/W  International Rectifier IGBT Transistors Resistance, Thermal, Junction to Case 0.64 °C/W   Speed, Switching 1 to 5 (Hard Switching), <special id="6"/>special id="80"/>20 (Resonant Mode) kHz  International Rectifier Speed, Switching 1 to 5 (Hard Switching), <special id="6"/>special id="80"/>20 (Resonant Mode) kHz  IGBT Transistors Speed, Switching 1 to 5 (Hard Switching), <special id="6"/>special id="80"/>20 (Resonant Mode) kHz  International Rectifier IGBT Transistors Speed, Switching 1 to 5 (Hard Switching), <special id="6"/>special id="80"/>20 (Resonant Mode) kHz   Temperature, Operating, Maximum +150 °C  International Rectifier Temperature, Operating, Maximum +150 °C  IGBT Transistors Temperature, Operating, Maximum +150 °C  International Rectifier IGBT Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  International Rectifier Temperature, Operating, Minimum -55 °C  IGBT Transistors Temperature, Operating, Minimum -55 °C  International Rectifier IGBT Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  International Rectifier Temperature, Operating, Range -55 to +150 °C  IGBT Transistors Temperature, Operating, Range -55 to +150 °C  International Rectifier IGBT Transistors Temperature, Operating, Range -55 to +150 °C   Type Fast  International Rectifier Type Fast  IGBT Transistors Type Fast  International Rectifier IGBT Transistors Type Fast   Voltage, Collector to Emitter 600 V  International Rectifier Voltage, Collector to Emitter 600 V  IGBT Transistors Voltage, Collector to Emitter 600 V  International Rectifier IGBT Transistors Voltage, Collector to Emitter 600 V   Voltage, Collector to Emitter Shorted 600 V  International Rectifier Voltage, Collector to Emitter Shorted 600 V  IGBT Transistors Voltage, Collector to Emitter Shorted 600 V  International Rectifier IGBT Transistors Voltage, Collector to Emitter Shorted 600 V   Voltage, Gate to Emitter ±20 V  International Rectifier Voltage, Gate to Emitter ±20 V  IGBT Transistors Voltage, Gate to Emitter ±20 V  International Rectifier IGBT Transistors Voltage, Gate to Emitter ±20 V   Width 0.209" (5.31mm)  International Rectifier Width 0.209" (5.31mm)  IGBT Transistors Width 0.209" (5.31mm)  International Rectifier IGBT Transistors Width 0.209" (5.31mm)  
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