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IRFR5410TRPBF
IRFR5410TRPBF -
MOSFET, Power; P-Ch; VDSS -100V; RDS(ON) 0.205Ohm; ID -13A; D-Pak (TO-252AA); PD 66W
聲明:圖片僅供參考,請(qǐng)以實(shí)物為準(zhǔn)!
制造商:
International Rectifier
International Rectifier
制造商產(chǎn)品編號(hào):
IRFR5410TRPBF
倉(cāng)庫(kù)庫(kù)存編號(hào):
70017451
技術(shù)數(shù)據(jù)表:
Datasheet
訂購(gòu)熱線(xiàn):
400-900-3095 0755-21000796, QQ:
800152669
, Email:
sales@szcwdz.com
由于產(chǎn)品數(shù)據(jù)庫(kù)龐大,部分產(chǎn)品信息可能未能及時(shí)更新,下單前請(qǐng)與銷(xiāo)售人員確認(rèn)好實(shí)時(shí)在庫(kù)數(shù)量,謝謝合作!
IRFR5410TRPBF產(chǎn)品概述
HEXFET® P-Channel Power MOSFETs, Infineon
HEXFET® Power MOSFETs present a variety of rugged single P-channel devices for AC-DC and DC-DC power supplies to audio and consumer electronics, motor control and lighting and home appliances.
IRFR5410TRPBF產(chǎn)品信息
Brand/Series
HEXFET Series
Capacitance, Input
760 pF @ -25 V
Channel Mode
Enhancement
Channel Type
P
Configuration
Dual Drain
Current, Drain
-13 A
Dimensions
6.73 x 6.22 x 2.39 mm
Gate Charge, Total
58 nC
Height
0.094" (2.39mm)
Length
0.264" (6.73mm)
Mounting Type
Surface Mount
Number of Elements per Chip
1
Number of Pins
3
Package Type
DPAK
Polarization
P-Channel
Power Dissipation
66 W
Resistance, Drain to Source On
0.205 Ω
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
-55 °C
Temperature, Operating, Range
-55 to +150 °C
Time, Turn-Off Delay
45 ns
Time, Turn-On Delay
15 ns
Transconductance, Forward
3.2 S
Typical Gate Charge @ Vgs
Maximum of 58 nC @ -10 V
Voltage, Breakdown, Drain to Source
-100 V
Voltage, Drain to Source
-100 V
Voltage, Forward, Diode
-1.6 V
Voltage, Gate to Source
±20 V
Width
0.245" (6.22mm)
關(guān)鍵詞
IRFR5410TRPBF相關(guān)搜索
Brand/Series HEXFET Series
International Rectifier Brand/Series HEXFET Series
MOSFET Transistors Brand/Series HEXFET Series
International Rectifier MOSFET Transistors Brand/Series HEXFET Series
Capacitance, Input 760 pF @ -25 V
International Rectifier Capacitance, Input 760 pF @ -25 V
MOSFET Transistors Capacitance, Input 760 pF @ -25 V
International Rectifier MOSFET Transistors Capacitance, Input 760 pF @ -25 V
Channel Mode Enhancement
International Rectifier Channel Mode Enhancement
MOSFET Transistors Channel Mode Enhancement
International Rectifier MOSFET Transistors Channel Mode Enhancement
Channel Type P
International Rectifier Channel Type P
MOSFET Transistors Channel Type P
International Rectifier MOSFET Transistors Channel Type P
Configuration Dual Drain
International Rectifier Configuration Dual Drain
MOSFET Transistors Configuration Dual Drain
International Rectifier MOSFET Transistors Configuration Dual Drain
Current, Drain -13 A
International Rectifier Current, Drain -13 A
MOSFET Transistors Current, Drain -13 A
International Rectifier MOSFET Transistors Current, Drain -13 A
Dimensions 6.73 x 6.22 x 2.39 mm
International Rectifier Dimensions 6.73 x 6.22 x 2.39 mm
MOSFET Transistors Dimensions 6.73 x 6.22 x 2.39 mm
International Rectifier MOSFET Transistors Dimensions 6.73 x 6.22 x 2.39 mm
Gate Charge, Total 58 nC
International Rectifier Gate Charge, Total 58 nC
MOSFET Transistors Gate Charge, Total 58 nC
International Rectifier MOSFET Transistors Gate Charge, Total 58 nC
Height 0.094" (2.39mm)
International Rectifier Height 0.094" (2.39mm)
MOSFET Transistors Height 0.094" (2.39mm)
International Rectifier MOSFET Transistors Height 0.094" (2.39mm)
Length 0.264" (6.73mm)
International Rectifier Length 0.264" (6.73mm)
MOSFET Transistors Length 0.264" (6.73mm)
International Rectifier MOSFET Transistors Length 0.264" (6.73mm)
Mounting Type Surface Mount
International Rectifier Mounting Type Surface Mount
MOSFET Transistors Mounting Type Surface Mount
International Rectifier MOSFET Transistors Mounting Type Surface Mount
Number of Elements per Chip 1
International Rectifier Number of Elements per Chip 1
MOSFET Transistors Number of Elements per Chip 1
International Rectifier MOSFET Transistors Number of Elements per Chip 1
Number of Pins 3
International Rectifier Number of Pins 3
MOSFET Transistors Number of Pins 3
International Rectifier MOSFET Transistors Number of Pins 3
Package Type DPAK
International Rectifier Package Type DPAK
MOSFET Transistors Package Type DPAK
International Rectifier MOSFET Transistors Package Type DPAK
Polarization P-Channel
International Rectifier Polarization P-Channel
MOSFET Transistors Polarization P-Channel
International Rectifier MOSFET Transistors Polarization P-Channel
Power Dissipation 66 W
International Rectifier Power Dissipation 66 W
MOSFET Transistors Power Dissipation 66 W
International Rectifier MOSFET Transistors Power Dissipation 66 W
Resistance, Drain to Source On 0.205 Ω
International Rectifier Resistance, Drain to Source On 0.205 Ω
MOSFET Transistors Resistance, Drain to Source On 0.205 Ω
International Rectifier MOSFET Transistors Resistance, Drain to Source On 0.205 Ω
Temperature, Operating, Maximum +150 °C
International Rectifier Temperature, Operating, Maximum +150 °C
MOSFET Transistors Temperature, Operating, Maximum +150 °C
International Rectifier MOSFET Transistors Temperature, Operating, Maximum +150 °C
Temperature, Operating, Minimum -55 °C
International Rectifier Temperature, Operating, Minimum -55 °C
MOSFET Transistors Temperature, Operating, Minimum -55 °C
International Rectifier MOSFET Transistors Temperature, Operating, Minimum -55 °C
Temperature, Operating, Range -55 to +150 °C
International Rectifier Temperature, Operating, Range -55 to +150 °C
MOSFET Transistors Temperature, Operating, Range -55 to +150 °C
International Rectifier MOSFET Transistors Temperature, Operating, Range -55 to +150 °C
Time, Turn-Off Delay 45 ns
International Rectifier Time, Turn-Off Delay 45 ns
MOSFET Transistors Time, Turn-Off Delay 45 ns
International Rectifier MOSFET Transistors Time, Turn-Off Delay 45 ns
Time, Turn-On Delay 15 ns
International Rectifier Time, Turn-On Delay 15 ns
MOSFET Transistors Time, Turn-On Delay 15 ns
International Rectifier MOSFET Transistors Time, Turn-On Delay 15 ns
Transconductance, Forward 3.2 S
International Rectifier Transconductance, Forward 3.2 S
MOSFET Transistors Transconductance, Forward 3.2 S
International Rectifier MOSFET Transistors Transconductance, Forward 3.2 S
Typical Gate Charge @ Vgs Maximum of 58 nC @ -10 V
International Rectifier Typical Gate Charge @ Vgs Maximum of 58 nC @ -10 V
MOSFET Transistors Typical Gate Charge @ Vgs Maximum of 58 nC @ -10 V
International Rectifier MOSFET Transistors Typical Gate Charge @ Vgs Maximum of 58 nC @ -10 V
Voltage, Breakdown, Drain to Source -100 V
International Rectifier Voltage, Breakdown, Drain to Source -100 V
MOSFET Transistors Voltage, Breakdown, Drain to Source -100 V
International Rectifier MOSFET Transistors Voltage, Breakdown, Drain to Source -100 V
Voltage, Drain to Source -100 V
International Rectifier Voltage, Drain to Source -100 V
MOSFET Transistors Voltage, Drain to Source -100 V
International Rectifier MOSFET Transistors Voltage, Drain to Source -100 V
Voltage, Forward, Diode -1.6 V
International Rectifier Voltage, Forward, Diode -1.6 V
MOSFET Transistors Voltage, Forward, Diode -1.6 V
International Rectifier MOSFET Transistors Voltage, Forward, Diode -1.6 V
Voltage, Gate to Source ±20 V
International Rectifier Voltage, Gate to Source ±20 V
MOSFET Transistors Voltage, Gate to Source ±20 V
International Rectifier MOSFET Transistors Voltage, Gate to Source ±20 V
Width 0.245" (6.22mm)
International Rectifier Width 0.245" (6.22mm)
MOSFET Transistors Width 0.245" (6.22mm)
International Rectifier MOSFET Transistors Width 0.245" (6.22mm)
郵箱:
sales@szcwdz.com
Q Q:
800152669
手機(jī)網(wǎng)站:
m.szcwdz.com
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