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IRFB4110PBF - 

MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 3.7 Milliohms; ID 180A; TO-220AB; PD 370W

International Rectifier IRFB4110PBF
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制造商產(chǎn)品編號(hào)：
IRFB4110PBF
倉(cāng)庫(kù)庫(kù)存編號(hào)：
70017158
技術(shù)數(shù)據(jù)表：
View IRFB4110PBF Datasheet Datasheet
訂購(gòu)熱線： 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
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IRFB4110PBF產(chǎn)品概述

"The new IRFB4110 75V MOSFETs are designed to shrink circuit size and increase power density in high power server AC-DC switch-mode power supplies (SMPS) with 12V output or in 48V rail ORing circuits. The new 100V devices suit high power flyback secondary rectification or offer enhanced primary-side efficiency in high power telecom isolated 48V DC-DC converters. In addition, the new MOSFETs can be used in stepper motor and brushless DC motor drive applications.

The IRFB4110PbF is a 100V MOSFET with 4.0mOhm maximum device on-resistance, and can slash component count in half, reducing PCB area and reducing heat sink size. "
"Applications
  • High Efficiency Synchronous Rectification in SMPS
  • Uninterruptible Power Supply
  • High Speed Power Switching
  • Hard Switched and High Frequency Circuits

    Benefits
  • Improved Gate, Avalanche and Dynamic dv/dt Ruggedness
  • Fully Characterized Capacitance and Avalanche SOA
  • Enhanced body diode dV/dt and dI/dt Capability"

    • IRFB4110PBF產(chǎn)品信息

      Brand/Series  HEXFET Series  
      Capacitance, Input  9620 pF @ 50 V  
      Channel Mode  Enhancement  
      Channel Type  N  
      Gate Charge, Total  150 nC  
      Height  0.65" (16.51mm)  
      Length  10.67  
      Package Type  TO-220AB  
      Polarization  N-Channel  
      Resistance, Drain to Source On  4.5 mΩ  
      Temperature, Operating, Maximum  +175  
      Temperature, Operating, Minimum  -55 °C  
      Temperature, Operating, Range  -55 to +175 °C  
      Time, Turn-Off Delay  78 ns  
      Time, Turn-On Delay  25 ns  
      Transconductance, Forward  160 S  
      Voltage, Breakdown, Drain to Source  100 V  
      Voltage, Forward, Diode  1.3 V  
      Voltage, Gate to Source  ±20 V  
      Width  0.19" (4.83mm)  
    關(guān)鍵詞         

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    IRFB4110PBF相關(guān)搜索

    Brand/Series HEXFET Series  International Rectifier Brand/Series HEXFET Series  MOSFET Transistors Brand/Series HEXFET Series  International Rectifier MOSFET Transistors Brand/Series HEXFET Series   Capacitance, Input 9620 pF @ 50 V  International Rectifier Capacitance, Input 9620 pF @ 50 V  MOSFET Transistors Capacitance, Input 9620 pF @ 50 V  International Rectifier MOSFET Transistors Capacitance, Input 9620 pF @ 50 V   Channel Mode Enhancement  International Rectifier Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  International Rectifier MOSFET Transistors Channel Mode Enhancement   Channel Type N  International Rectifier Channel Type N  MOSFET Transistors Channel Type N  International Rectifier MOSFET Transistors Channel Type N   Gate Charge, Total 150 nC  International Rectifier Gate Charge, Total 150 nC  MOSFET Transistors Gate Charge, Total 150 nC  International Rectifier MOSFET Transistors Gate Charge, Total 150 nC   Height 0.65" (16.51mm)  International Rectifier Height 0.65" (16.51mm)  MOSFET Transistors Height 0.65" (16.51mm)  International Rectifier MOSFET Transistors Height 0.65" (16.51mm)   Length 10.67  International Rectifier Length 10.67  MOSFET Transistors Length 10.67  International Rectifier MOSFET Transistors Length 10.67   Package Type TO-220AB  International Rectifier Package Type TO-220AB  MOSFET Transistors Package Type TO-220AB  International Rectifier MOSFET Transistors Package Type TO-220AB   Polarization N-Channel  International Rectifier Polarization N-Channel  MOSFET Transistors Polarization N-Channel  International Rectifier MOSFET Transistors Polarization N-Channel   Resistance, Drain to Source On 4.5 mΩ  International Rectifier Resistance, Drain to Source On 4.5 mΩ  MOSFET Transistors Resistance, Drain to Source On 4.5 mΩ  International Rectifier MOSFET Transistors Resistance, Drain to Source On 4.5 mΩ   Temperature, Operating, Maximum +175  International Rectifier Temperature, Operating, Maximum +175  MOSFET Transistors Temperature, Operating, Maximum +175  International Rectifier MOSFET Transistors Temperature, Operating, Maximum +175   Temperature, Operating, Minimum -55 °C  International Rectifier Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  International Rectifier MOSFET Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +175 °C  International Rectifier Temperature, Operating, Range -55 to +175 °C  MOSFET Transistors Temperature, Operating, Range -55 to +175 °C  International Rectifier MOSFET Transistors Temperature, Operating, Range -55 to +175 °C   Time, Turn-Off Delay 78 ns  International Rectifier Time, Turn-Off Delay 78 ns  MOSFET Transistors Time, Turn-Off Delay 78 ns  International Rectifier MOSFET Transistors Time, Turn-Off Delay 78 ns   Time, Turn-On Delay 25 ns  International Rectifier Time, Turn-On Delay 25 ns  MOSFET Transistors Time, Turn-On Delay 25 ns  International Rectifier MOSFET Transistors Time, Turn-On Delay 25 ns   Transconductance, Forward 160 S  International Rectifier Transconductance, Forward 160 S  MOSFET Transistors Transconductance, Forward 160 S  International Rectifier MOSFET Transistors Transconductance, Forward 160 S   Voltage, Breakdown, Drain to Source 100 V  International Rectifier Voltage, Breakdown, Drain to Source 100 V  MOSFET Transistors Voltage, Breakdown, Drain to Source 100 V  International Rectifier MOSFET Transistors Voltage, Breakdown, Drain to Source 100 V   Voltage, Forward, Diode 1.3 V  International Rectifier Voltage, Forward, Diode 1.3 V  MOSFET Transistors Voltage, Forward, Diode 1.3 V  International Rectifier MOSFET Transistors Voltage, Forward, Diode 1.3 V   Voltage, Gate to Source ±20 V  International Rectifier Voltage, Gate to Source ±20 V  MOSFET Transistors Voltage, Gate to Source ±20 V  International Rectifier MOSFET Transistors Voltage, Gate to Source ±20 V   Width 0.19" (4.83mm)  International Rectifier Width 0.19" (4.83mm)  MOSFET Transistors Width 0.19" (4.83mm)  International Rectifier MOSFET Transistors Width 0.19" (4.83mm)  
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