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8910DPA43V02
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70084122
IM21-14-CDTRI
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IRFB38N20DPBF
IRFB38N20DPBF -
MOSFET, Power; N-Ch; VDSS 200V; RDS(ON) 0.054Ohm; ID 43A; TO-220AB; PD 300W; VGS +/-30V
聲明:圖片僅供參考,請以實物為準(zhǔn)!
制造商:
International Rectifier
International Rectifier
制造商產(chǎn)品編號:
IRFB38N20DPBF
倉庫庫存編號:
70017523
技術(shù)數(shù)據(jù)表:
Datasheet
訂購熱線:
400-900-3095 0755-21000796, QQ:
800152669
, Email:
sales@szcwdz.com
由于產(chǎn)品數(shù)據(jù)庫龐大,部分產(chǎn)品信息可能未能及時更新,下單前請與銷售人員確認(rèn)好實時在庫數(shù)量,謝謝合作!
IRFB38N20DPBF產(chǎn)品概述
HEXFET® N-Channel Power MOSFET up to 50A, Infineon
HEXFET® Power MOSFETs present a variety of rugged single N-channel devices for AC-DC and DC-DC power supplies to audio and consumer electronics, motor control and lighting and home appliances.
IRFB38N20DPBF產(chǎn)品信息
Brand/Series
HEXFET Series
Capacitance, Input
2900 pF @ 25 V
Channel Mode
Enhancement
Channel Type
N
Configuration
Single
Current, Drain
43 A
Dimensions
10.67 x 4.83 x 9.02 mm
Gate Charge, Total
60 nC
Height
0.355" (9.02mm)
Length
0.42" (10.67mm)
Mounting Type
Through Hole
Number of Elements per Chip
1
Number of Pins
3
Package Type
TO-220AB
Polarization
N-Channel
Power Dissipation
300 W
Resistance, Drain to Source On
0.054 Ω
Resistance, Thermal, Junction to Case
0.47 °C/W
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
-55 °C
Temperature, Operating, Range
-55 to +175 °C
Time, Turn-Off Delay
29 ns
Time, Turn-On Delay
16 ns
Transconductance, Forward
17 S
Typical Gate Charge @ Vgs
60 nC @ 10 V
Voltage, Breakdown, Drain to Source
200 V
Voltage, Drain to Source
200 V
Voltage, Forward, Diode
1.5 V
Voltage, Gate to Source
±30 V
Width
0.19" (4.83mm)
關(guān)鍵詞
IRFB38N20DPBF客戶還搜索了
參考圖片
制造商 / 說明 / 型號 / 倉庫庫存編號
PDF
操作
International Rectifier
HALF BRIDGE DRIVER, SOFTTURN-ON, SINGLEINPUT PLUS INVERTING SHUT-DOWN, 14-LEAD S
型號:
IR21844SPBF
倉庫庫存編號:
70017306
搜索
AZ Displays
LCD, GRAPHIC MODULE, 122X32, TRANSFLECTIVE, LED BACKLIGHT, GRAY MODE STN, BOTTOM VIEW
型號:
AGM1232G-FL-GBH
倉庫庫存編號:
70039312
搜索
Aim Cambridge-Cinch Connectivity Solutions
connector, modular plug, rj45(10p10c), cat5, solid/strand cond, round unshld cable
型號:
32-5910UL
倉庫庫存編號:
70081158
搜索
TE Connectivity
Conn; Term Strip; Barrier; 4Pole; 9.53mmPitch; SnglRow; 22-12; Series #6; 25A; 300V
型號:
6-1437652-7
倉庫庫存編號:
70088653
搜索
TE Connectivity
Extraction Tool for Mini-Universal MATE-N-LOK Series
型號:
189727-1
倉庫庫存編號:
70089812
搜索
EPCOS
Capacitor; Polypropylene Film; Cap 1 uF; Tol 20%; Vol-Rtg 305 VAC; Radial; MKP X2
型號:
B32924C3105M
倉庫庫存編號:
70102444
搜索
Amphenol Industrial
connector, metal circ, straight plug, size28, 20 #16 solder socket cont, olive drab
型號:
97-3106A-28-16S
倉庫庫存編號:
70108572
搜索
Honeywell
Standard Switch, Basic, SPDT, 15 MAPS, 9-13 OPERATING FORCE
型號:
BZ-2RQ181-A2
倉庫庫存編號:
70119116
搜索
Amphenol Industrial
connector comp, shell only, metal circular, str plug, solid bkshl, size 28, olive drab
型號:
97-3106A-28(0850)
倉庫庫存編號:
70141309
搜索
IRFB38N20DPBF相關(guān)搜索
Brand/Series HEXFET Series
International Rectifier Brand/Series HEXFET Series
MOSFET Transistors Brand/Series HEXFET Series
International Rectifier MOSFET Transistors Brand/Series HEXFET Series
Capacitance, Input 2900 pF @ 25 V
International Rectifier Capacitance, Input 2900 pF @ 25 V
MOSFET Transistors Capacitance, Input 2900 pF @ 25 V
International Rectifier MOSFET Transistors Capacitance, Input 2900 pF @ 25 V
Channel Mode Enhancement
International Rectifier Channel Mode Enhancement
MOSFET Transistors Channel Mode Enhancement
International Rectifier MOSFET Transistors Channel Mode Enhancement
Channel Type N
International Rectifier Channel Type N
MOSFET Transistors Channel Type N
International Rectifier MOSFET Transistors Channel Type N
Configuration Single
International Rectifier Configuration Single
MOSFET Transistors Configuration Single
International Rectifier MOSFET Transistors Configuration Single
Current, Drain 43 A
International Rectifier Current, Drain 43 A
MOSFET Transistors Current, Drain 43 A
International Rectifier MOSFET Transistors Current, Drain 43 A
Dimensions 10.67 x 4.83 x 9.02 mm
International Rectifier Dimensions 10.67 x 4.83 x 9.02 mm
MOSFET Transistors Dimensions 10.67 x 4.83 x 9.02 mm
International Rectifier MOSFET Transistors Dimensions 10.67 x 4.83 x 9.02 mm
Gate Charge, Total 60 nC
International Rectifier Gate Charge, Total 60 nC
MOSFET Transistors Gate Charge, Total 60 nC
International Rectifier MOSFET Transistors Gate Charge, Total 60 nC
Height 0.355" (9.02mm)
International Rectifier Height 0.355" (9.02mm)
MOSFET Transistors Height 0.355" (9.02mm)
International Rectifier MOSFET Transistors Height 0.355" (9.02mm)
Length 0.42" (10.67mm)
International Rectifier Length 0.42" (10.67mm)
MOSFET Transistors Length 0.42" (10.67mm)
International Rectifier MOSFET Transistors Length 0.42" (10.67mm)
Mounting Type Through Hole
International Rectifier Mounting Type Through Hole
MOSFET Transistors Mounting Type Through Hole
International Rectifier MOSFET Transistors Mounting Type Through Hole
Number of Elements per Chip 1
International Rectifier Number of Elements per Chip 1
MOSFET Transistors Number of Elements per Chip 1
International Rectifier MOSFET Transistors Number of Elements per Chip 1
Number of Pins 3
International Rectifier Number of Pins 3
MOSFET Transistors Number of Pins 3
International Rectifier MOSFET Transistors Number of Pins 3
Package Type TO-220AB
International Rectifier Package Type TO-220AB
MOSFET Transistors Package Type TO-220AB
International Rectifier MOSFET Transistors Package Type TO-220AB
Polarization N-Channel
International Rectifier Polarization N-Channel
MOSFET Transistors Polarization N-Channel
International Rectifier MOSFET Transistors Polarization N-Channel
Power Dissipation 300 W
International Rectifier Power Dissipation 300 W
MOSFET Transistors Power Dissipation 300 W
International Rectifier MOSFET Transistors Power Dissipation 300 W
Resistance, Drain to Source On 0.054 Ω
International Rectifier Resistance, Drain to Source On 0.054 Ω
MOSFET Transistors Resistance, Drain to Source On 0.054 Ω
International Rectifier MOSFET Transistors Resistance, Drain to Source On 0.054 Ω
Resistance, Thermal, Junction to Case 0.47 °C/W
International Rectifier Resistance, Thermal, Junction to Case 0.47 °C/W
MOSFET Transistors Resistance, Thermal, Junction to Case 0.47 °C/W
International Rectifier MOSFET Transistors Resistance, Thermal, Junction to Case 0.47 °C/W
Temperature, Operating, Maximum +175 °C
International Rectifier Temperature, Operating, Maximum +175 °C
MOSFET Transistors Temperature, Operating, Maximum +175 °C
International Rectifier MOSFET Transistors Temperature, Operating, Maximum +175 °C
Temperature, Operating, Minimum -55 °C
International Rectifier Temperature, Operating, Minimum -55 °C
MOSFET Transistors Temperature, Operating, Minimum -55 °C
International Rectifier MOSFET Transistors Temperature, Operating, Minimum -55 °C
Temperature, Operating, Range -55 to +175 °C
International Rectifier Temperature, Operating, Range -55 to +175 °C
MOSFET Transistors Temperature, Operating, Range -55 to +175 °C
International Rectifier MOSFET Transistors Temperature, Operating, Range -55 to +175 °C
Time, Turn-Off Delay 29 ns
International Rectifier Time, Turn-Off Delay 29 ns
MOSFET Transistors Time, Turn-Off Delay 29 ns
International Rectifier MOSFET Transistors Time, Turn-Off Delay 29 ns
Time, Turn-On Delay 16 ns
International Rectifier Time, Turn-On Delay 16 ns
MOSFET Transistors Time, Turn-On Delay 16 ns
International Rectifier MOSFET Transistors Time, Turn-On Delay 16 ns
Transconductance, Forward 17 S
International Rectifier Transconductance, Forward 17 S
MOSFET Transistors Transconductance, Forward 17 S
International Rectifier MOSFET Transistors Transconductance, Forward 17 S
Typical Gate Charge @ Vgs 60 nC @ 10 V
International Rectifier Typical Gate Charge @ Vgs 60 nC @ 10 V
MOSFET Transistors Typical Gate Charge @ Vgs 60 nC @ 10 V
International Rectifier MOSFET Transistors Typical Gate Charge @ Vgs 60 nC @ 10 V
Voltage, Breakdown, Drain to Source 200 V
International Rectifier Voltage, Breakdown, Drain to Source 200 V
MOSFET Transistors Voltage, Breakdown, Drain to Source 200 V
International Rectifier MOSFET Transistors Voltage, Breakdown, Drain to Source 200 V
Voltage, Drain to Source 200 V
International Rectifier Voltage, Drain to Source 200 V
MOSFET Transistors Voltage, Drain to Source 200 V
International Rectifier MOSFET Transistors Voltage, Drain to Source 200 V
Voltage, Forward, Diode 1.5 V
International Rectifier Voltage, Forward, Diode 1.5 V
MOSFET Transistors Voltage, Forward, Diode 1.5 V
International Rectifier MOSFET Transistors Voltage, Forward, Diode 1.5 V
Voltage, Gate to Source ±30 V
International Rectifier Voltage, Gate to Source ±30 V
MOSFET Transistors Voltage, Gate to Source ±30 V
International Rectifier MOSFET Transistors Voltage, Gate to Source ±30 V
Width 0.19" (4.83mm)
International Rectifier Width 0.19" (4.83mm)
MOSFET Transistors Width 0.19" (4.83mm)
International Rectifier MOSFET Transistors Width 0.19" (4.83mm)
郵箱:
sales@szcwdz.com
Q Q:
800152669
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m.szcwdz.com
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