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英國(guó)2號(hào)倉庫
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IRF7404TRPBF
IRF7404TRPBF -
MOSFET, Power; P-Ch; VDSS -20V; RDS(ON) 0.04Ohm; ID -6.7A; SO-8; PD 2.5W; VGS +/-12V
聲明:圖片僅供參考,請(qǐng)以實(shí)物為準(zhǔn)!
制造商:
International Rectifier
International Rectifier
制造商產(chǎn)品編號(hào):
IRF7404TRPBF
倉庫庫存編號(hào):
70017702
技術(shù)數(shù)據(jù)表:
Datasheet
訂購熱線:
400-900-3095 0755-21000796, QQ:
800152669
, Email:
sales@szcwdz.com
由于產(chǎn)品數(shù)據(jù)庫龐大,部分產(chǎn)品信息可能未能及時(shí)更新,下單前請(qǐng)與銷售人員確認(rèn)好實(shí)時(shí)在庫數(shù)量,謝謝合作!
IRF7404TRPBF產(chǎn)品概述
HEXFET® P-Channel Power MOSFETs, Infineon
HEXFET® Power MOSFETs present a variety of rugged single P-channel devices for AC-DC and DC-DC power supplies to audio and consumer electronics, motor control and lighting and home appliances.
IRF7404TRPBF產(chǎn)品信息
Brand/Series
HEXFET Series
Capacitance, Input
1500 pF @ -15 V
Channel Mode
Enhancement
Channel Type
P
Configuration
Quad Drain, Triple Source
Current, Drain
-6.7 A
Dimensions
5.00 x 4.00 x 1.50 mm
Gate Charge, Total
50 nC
Height
0.059" (1.5mm)
Length
0.196" (5mm)
Mounting Type
Surface Mount
Number of Elements per Chip
1
Number of Pins
8
Package Type
SO-8
Polarization
P-Channel
Power Dissipation
2.5 W
Resistance, Drain to Source On
0.06 Ω
Resistance, Thermal, Junction to Case
50 °C/W
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
-55 °C
Temperature, Operating, Range
-55 to +150 °C
Time, Turn-Off Delay
100 ns
Time, Turn-On Delay
14 ns
Transconductance, Forward
6.8 S
Typical Gate Charge @ Vgs
Maximum of 50 nC @ -4.5 V
Voltage, Breakdown, Drain to Source
-20 V
Voltage, Drain to Source
-20 V
Voltage, Forward, Diode
-1 V
Voltage, Gate to Source
±12 V
Width
0.157" (4mm)
關(guān)鍵詞
IRF7404TRPBF客戶還搜索了
參考圖片
制造商 / 說明 / 型號(hào) / 倉庫庫存編號(hào)
PDF
操作
AVX
Capacitor; Tantalum; Cap 10 uF; Tol 10%; Vol-Rtg 16 VDC; SMT; 3216; ESR 4 Ohms; TR
型號(hào):
TAJA106K016RNJ
倉庫庫存編號(hào):
70001840
搜索
Microchip Technology Inc.
4K, 512 X 8, 1.8V SER EE IND
型號(hào):
25AA040AT-I/OT
倉庫庫存編號(hào):
70045885
搜索
MG Chemicals
Silicone; Adhesive sealant; translucentpaste; 1 part; 3oz tube
型號(hào):
1035-85ML
倉庫庫存編號(hào):
70125866
搜索
General Semiconductor / Vishay
RECTIFIER; TO-227A (SMPC); 40V; 10A; SMDPLANAR SCHOTTKY; Halogen Free
型號(hào):
SS10P4-M3/86A
倉庫庫存編號(hào):
70217643
搜索
IRF7404TRPBF相關(guān)搜索
Brand/Series HEXFET Series
International Rectifier Brand/Series HEXFET Series
MOSFET Transistors Brand/Series HEXFET Series
International Rectifier MOSFET Transistors Brand/Series HEXFET Series
Capacitance, Input 1500 pF @ -15 V
International Rectifier Capacitance, Input 1500 pF @ -15 V
MOSFET Transistors Capacitance, Input 1500 pF @ -15 V
International Rectifier MOSFET Transistors Capacitance, Input 1500 pF @ -15 V
Channel Mode Enhancement
International Rectifier Channel Mode Enhancement
MOSFET Transistors Channel Mode Enhancement
International Rectifier MOSFET Transistors Channel Mode Enhancement
Channel Type P
International Rectifier Channel Type P
MOSFET Transistors Channel Type P
International Rectifier MOSFET Transistors Channel Type P
Configuration Quad Drain, Triple Source
International Rectifier Configuration Quad Drain, Triple Source
MOSFET Transistors Configuration Quad Drain, Triple Source
International Rectifier MOSFET Transistors Configuration Quad Drain, Triple Source
Current, Drain -6.7 A
International Rectifier Current, Drain -6.7 A
MOSFET Transistors Current, Drain -6.7 A
International Rectifier MOSFET Transistors Current, Drain -6.7 A
Dimensions 5.00 x 4.00 x 1.50 mm
International Rectifier Dimensions 5.00 x 4.00 x 1.50 mm
MOSFET Transistors Dimensions 5.00 x 4.00 x 1.50 mm
International Rectifier MOSFET Transistors Dimensions 5.00 x 4.00 x 1.50 mm
Gate Charge, Total 50 nC
International Rectifier Gate Charge, Total 50 nC
MOSFET Transistors Gate Charge, Total 50 nC
International Rectifier MOSFET Transistors Gate Charge, Total 50 nC
Height 0.059" (1.5mm)
International Rectifier Height 0.059" (1.5mm)
MOSFET Transistors Height 0.059" (1.5mm)
International Rectifier MOSFET Transistors Height 0.059" (1.5mm)
Length 0.196" (5mm)
International Rectifier Length 0.196" (5mm)
MOSFET Transistors Length 0.196" (5mm)
International Rectifier MOSFET Transistors Length 0.196" (5mm)
Mounting Type Surface Mount
International Rectifier Mounting Type Surface Mount
MOSFET Transistors Mounting Type Surface Mount
International Rectifier MOSFET Transistors Mounting Type Surface Mount
Number of Elements per Chip 1
International Rectifier Number of Elements per Chip 1
MOSFET Transistors Number of Elements per Chip 1
International Rectifier MOSFET Transistors Number of Elements per Chip 1
Number of Pins 8
International Rectifier Number of Pins 8
MOSFET Transistors Number of Pins 8
International Rectifier MOSFET Transistors Number of Pins 8
Package Type SO-8
International Rectifier Package Type SO-8
MOSFET Transistors Package Type SO-8
International Rectifier MOSFET Transistors Package Type SO-8
Polarization P-Channel
International Rectifier Polarization P-Channel
MOSFET Transistors Polarization P-Channel
International Rectifier MOSFET Transistors Polarization P-Channel
Power Dissipation 2.5 W
International Rectifier Power Dissipation 2.5 W
MOSFET Transistors Power Dissipation 2.5 W
International Rectifier MOSFET Transistors Power Dissipation 2.5 W
Resistance, Drain to Source On 0.06 Ω
International Rectifier Resistance, Drain to Source On 0.06 Ω
MOSFET Transistors Resistance, Drain to Source On 0.06 Ω
International Rectifier MOSFET Transistors Resistance, Drain to Source On 0.06 Ω
Resistance, Thermal, Junction to Case 50 °C/W
International Rectifier Resistance, Thermal, Junction to Case 50 °C/W
MOSFET Transistors Resistance, Thermal, Junction to Case 50 °C/W
International Rectifier MOSFET Transistors Resistance, Thermal, Junction to Case 50 °C/W
Temperature, Operating, Maximum +150 °C
International Rectifier Temperature, Operating, Maximum +150 °C
MOSFET Transistors Temperature, Operating, Maximum +150 °C
International Rectifier MOSFET Transistors Temperature, Operating, Maximum +150 °C
Temperature, Operating, Minimum -55 °C
International Rectifier Temperature, Operating, Minimum -55 °C
MOSFET Transistors Temperature, Operating, Minimum -55 °C
International Rectifier MOSFET Transistors Temperature, Operating, Minimum -55 °C
Temperature, Operating, Range -55 to +150 °C
International Rectifier Temperature, Operating, Range -55 to +150 °C
MOSFET Transistors Temperature, Operating, Range -55 to +150 °C
International Rectifier MOSFET Transistors Temperature, Operating, Range -55 to +150 °C
Time, Turn-Off Delay 100 ns
International Rectifier Time, Turn-Off Delay 100 ns
MOSFET Transistors Time, Turn-Off Delay 100 ns
International Rectifier MOSFET Transistors Time, Turn-Off Delay 100 ns
Time, Turn-On Delay 14 ns
International Rectifier Time, Turn-On Delay 14 ns
MOSFET Transistors Time, Turn-On Delay 14 ns
International Rectifier MOSFET Transistors Time, Turn-On Delay 14 ns
Transconductance, Forward 6.8 S
International Rectifier Transconductance, Forward 6.8 S
MOSFET Transistors Transconductance, Forward 6.8 S
International Rectifier MOSFET Transistors Transconductance, Forward 6.8 S
Typical Gate Charge @ Vgs Maximum of 50 nC @ -4.5 V
International Rectifier Typical Gate Charge @ Vgs Maximum of 50 nC @ -4.5 V
MOSFET Transistors Typical Gate Charge @ Vgs Maximum of 50 nC @ -4.5 V
International Rectifier MOSFET Transistors Typical Gate Charge @ Vgs Maximum of 50 nC @ -4.5 V
Voltage, Breakdown, Drain to Source -20 V
International Rectifier Voltage, Breakdown, Drain to Source -20 V
MOSFET Transistors Voltage, Breakdown, Drain to Source -20 V
International Rectifier MOSFET Transistors Voltage, Breakdown, Drain to Source -20 V
Voltage, Drain to Source -20 V
International Rectifier Voltage, Drain to Source -20 V
MOSFET Transistors Voltage, Drain to Source -20 V
International Rectifier MOSFET Transistors Voltage, Drain to Source -20 V
Voltage, Forward, Diode -1 V
International Rectifier Voltage, Forward, Diode -1 V
MOSFET Transistors Voltage, Forward, Diode -1 V
International Rectifier MOSFET Transistors Voltage, Forward, Diode -1 V
Voltage, Gate to Source ±12 V
International Rectifier Voltage, Gate to Source ±12 V
MOSFET Transistors Voltage, Gate to Source ±12 V
International Rectifier MOSFET Transistors Voltage, Gate to Source ±12 V
Width 0.157" (4mm)
International Rectifier Width 0.157" (4mm)
MOSFET Transistors Width 0.157" (4mm)
International Rectifier MOSFET Transistors Width 0.157" (4mm)
郵箱:
sales@szcwdz.com
Q Q:
800152669
手機(jī)網(wǎng)站:
m.szcwdz.com
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