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IRF7329PBF
IRF7329PBF -
MOSFET, Power; Dual P-Ch; VDSS -12V; RDS(ON) 17 Milliohms; ID -9.2A; SO-8; PD 2W; -55de
聲明:圖片僅供參考,請(qǐng)以實(shí)物為準(zhǔn)!
制造商:
International Rectifier
International Rectifier
制造商產(chǎn)品編號(hào):
IRF7329PBF
倉(cāng)庫(kù)庫(kù)存編號(hào):
70017580
技術(shù)數(shù)據(jù)表:
Datasheet
訂購(gòu)熱線:
400-900-3095 0755-21000796, QQ:
800152669
, Email:
sales@szcwdz.com
由于產(chǎn)品數(shù)據(jù)庫(kù)龐大,部分產(chǎn)品信息可能未能及時(shí)更新,下單前請(qǐng)與銷(xiāo)售人員確認(rèn)好實(shí)時(shí)在庫(kù)數(shù)量,謝謝合作!
IRF7329PBF產(chǎn)品概述
HEXFET® P-Channel Power MOSFETs, Infineon
HEXFET® Power MOSFETs present a variety of rugged single P-channel devices for AC-DC and DC-DC power supplies to audio and consumer electronics, motor control and lighting and home appliances.
IRF7329PBF產(chǎn)品信息
Brand/Series
HEXFET Series
Capacitance, Input
3450 pF @ -10 V
Channel Mode
Enhancement
Channel Type
N
Configuration
Dual Source, Quad Drain
Current, Drain
-9.2 A
Dimensions
5.00 x 4.00 x 1.50 mm
Gate Charge, Total
38 nC
Height
0.059" (1.5mm)
Length
0.196" (5mm)
Mounting Type
Surface Mount
Number of Elements per Chip
2
Number of Pins
8
Package Type
SO-8
Polarization
Dual P-Channel
Power Dissipation
2 W
Resistance, Drain to Source On
30 mΩ
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
-55 °C
Temperature, Operating, Range
-55 to +150 °C
Time, Turn-Off Delay
340 ns
Time, Turn-On Delay
10 ns
Transconductance, Forward
25 S
Typical Gate Charge @ Vgs
38 nC @ -4.5 V
Voltage, Breakdown, Drain to Source
-12 V
Voltage, Drain to Source
-12 V
Voltage, Forward, Diode
-1.2 V
Voltage, Gate to Source
±8 V
Width
0.157" (4mm)
關(guān)鍵詞
IRF7329PBF相關(guān)搜索
Brand/Series HEXFET Series
International Rectifier Brand/Series HEXFET Series
MOSFET Transistors Brand/Series HEXFET Series
International Rectifier MOSFET Transistors Brand/Series HEXFET Series
Capacitance, Input 3450 pF @ -10 V
International Rectifier Capacitance, Input 3450 pF @ -10 V
MOSFET Transistors Capacitance, Input 3450 pF @ -10 V
International Rectifier MOSFET Transistors Capacitance, Input 3450 pF @ -10 V
Channel Mode Enhancement
International Rectifier Channel Mode Enhancement
MOSFET Transistors Channel Mode Enhancement
International Rectifier MOSFET Transistors Channel Mode Enhancement
Channel Type N
International Rectifier Channel Type N
MOSFET Transistors Channel Type N
International Rectifier MOSFET Transistors Channel Type N
Configuration Dual Source, Quad Drain
International Rectifier Configuration Dual Source, Quad Drain
MOSFET Transistors Configuration Dual Source, Quad Drain
International Rectifier MOSFET Transistors Configuration Dual Source, Quad Drain
Current, Drain -9.2 A
International Rectifier Current, Drain -9.2 A
MOSFET Transistors Current, Drain -9.2 A
International Rectifier MOSFET Transistors Current, Drain -9.2 A
Dimensions 5.00 x 4.00 x 1.50 mm
International Rectifier Dimensions 5.00 x 4.00 x 1.50 mm
MOSFET Transistors Dimensions 5.00 x 4.00 x 1.50 mm
International Rectifier MOSFET Transistors Dimensions 5.00 x 4.00 x 1.50 mm
Gate Charge, Total 38 nC
International Rectifier Gate Charge, Total 38 nC
MOSFET Transistors Gate Charge, Total 38 nC
International Rectifier MOSFET Transistors Gate Charge, Total 38 nC
Height 0.059" (1.5mm)
International Rectifier Height 0.059" (1.5mm)
MOSFET Transistors Height 0.059" (1.5mm)
International Rectifier MOSFET Transistors Height 0.059" (1.5mm)
Length 0.196" (5mm)
International Rectifier Length 0.196" (5mm)
MOSFET Transistors Length 0.196" (5mm)
International Rectifier MOSFET Transistors Length 0.196" (5mm)
Mounting Type Surface Mount
International Rectifier Mounting Type Surface Mount
MOSFET Transistors Mounting Type Surface Mount
International Rectifier MOSFET Transistors Mounting Type Surface Mount
Number of Elements per Chip 2
International Rectifier Number of Elements per Chip 2
MOSFET Transistors Number of Elements per Chip 2
International Rectifier MOSFET Transistors Number of Elements per Chip 2
Number of Pins 8
International Rectifier Number of Pins 8
MOSFET Transistors Number of Pins 8
International Rectifier MOSFET Transistors Number of Pins 8
Package Type SO-8
International Rectifier Package Type SO-8
MOSFET Transistors Package Type SO-8
International Rectifier MOSFET Transistors Package Type SO-8
Polarization Dual P-Channel
International Rectifier Polarization Dual P-Channel
MOSFET Transistors Polarization Dual P-Channel
International Rectifier MOSFET Transistors Polarization Dual P-Channel
Power Dissipation 2 W
International Rectifier Power Dissipation 2 W
MOSFET Transistors Power Dissipation 2 W
International Rectifier MOSFET Transistors Power Dissipation 2 W
Resistance, Drain to Source On 30 mΩ
International Rectifier Resistance, Drain to Source On 30 mΩ
MOSFET Transistors Resistance, Drain to Source On 30 mΩ
International Rectifier MOSFET Transistors Resistance, Drain to Source On 30 mΩ
Temperature, Operating, Maximum +150 °C
International Rectifier Temperature, Operating, Maximum +150 °C
MOSFET Transistors Temperature, Operating, Maximum +150 °C
International Rectifier MOSFET Transistors Temperature, Operating, Maximum +150 °C
Temperature, Operating, Minimum -55 °C
International Rectifier Temperature, Operating, Minimum -55 °C
MOSFET Transistors Temperature, Operating, Minimum -55 °C
International Rectifier MOSFET Transistors Temperature, Operating, Minimum -55 °C
Temperature, Operating, Range -55 to +150 °C
International Rectifier Temperature, Operating, Range -55 to +150 °C
MOSFET Transistors Temperature, Operating, Range -55 to +150 °C
International Rectifier MOSFET Transistors Temperature, Operating, Range -55 to +150 °C
Time, Turn-Off Delay 340 ns
International Rectifier Time, Turn-Off Delay 340 ns
MOSFET Transistors Time, Turn-Off Delay 340 ns
International Rectifier MOSFET Transistors Time, Turn-Off Delay 340 ns
Time, Turn-On Delay 10 ns
International Rectifier Time, Turn-On Delay 10 ns
MOSFET Transistors Time, Turn-On Delay 10 ns
International Rectifier MOSFET Transistors Time, Turn-On Delay 10 ns
Transconductance, Forward 25 S
International Rectifier Transconductance, Forward 25 S
MOSFET Transistors Transconductance, Forward 25 S
International Rectifier MOSFET Transistors Transconductance, Forward 25 S
Typical Gate Charge @ Vgs 38 nC @ -4.5 V
International Rectifier Typical Gate Charge @ Vgs 38 nC @ -4.5 V
MOSFET Transistors Typical Gate Charge @ Vgs 38 nC @ -4.5 V
International Rectifier MOSFET Transistors Typical Gate Charge @ Vgs 38 nC @ -4.5 V
Voltage, Breakdown, Drain to Source -12 V
International Rectifier Voltage, Breakdown, Drain to Source -12 V
MOSFET Transistors Voltage, Breakdown, Drain to Source -12 V
International Rectifier MOSFET Transistors Voltage, Breakdown, Drain to Source -12 V
Voltage, Drain to Source -12 V
International Rectifier Voltage, Drain to Source -12 V
MOSFET Transistors Voltage, Drain to Source -12 V
International Rectifier MOSFET Transistors Voltage, Drain to Source -12 V
Voltage, Forward, Diode -1.2 V
International Rectifier Voltage, Forward, Diode -1.2 V
MOSFET Transistors Voltage, Forward, Diode -1.2 V
International Rectifier MOSFET Transistors Voltage, Forward, Diode -1.2 V
Voltage, Gate to Source ±8 V
International Rectifier Voltage, Gate to Source ±8 V
MOSFET Transistors Voltage, Gate to Source ±8 V
International Rectifier MOSFET Transistors Voltage, Gate to Source ±8 V
Width 0.157" (4mm)
International Rectifier Width 0.157" (4mm)
MOSFET Transistors Width 0.157" (4mm)
International Rectifier MOSFET Transistors Width 0.157" (4mm)
郵箱:
sales@szcwdz.com
Q Q:
800152669
手機(jī)網(wǎng)站:
m.szcwdz.com
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