Brand/Series |
HEXFET Series |
|
Capacitance, Input |
710 pF @ -25 V |
|
Channel Mode |
Enhancement |
|
Channel Type |
P |
|
Configuration |
Dual Drain |
|
Current, Drain |
-4.9 A |
|
Dimensions |
5.00 x 4.00 x 1.50 mm |
|
Gate Charge, Total |
23 nC |
|
Height |
0.059" (1.5mm) |
|
Length |
0.196" (5mm) |
|
Mounting Type |
Surface Mount |
|
Number of Elements per Chip |
2 |
|
Number of Pins |
8 |
|
Package Type |
SO-8 |
|
Polarization |
Dual P-Channel |
|
Power Dissipation |
2 W |
|
Resistance, Drain to Source On |
0.098 Ω |
|
Temperature, Operating, Maximum |
+150 °C |
|
Temperature, Operating, Minimum |
-55 °C |
|
Temperature, Operating, Range |
-55 to +150 °C |
|
Time, Turn-Off Delay |
34 ns |
|
Time, Turn-On Delay |
13 ns |
|
Transconductance, Forward |
7.7 S |
|
Typical Gate Charge @ Vgs |
23 nC @ -10 V |
|
Voltage, Breakdown, Drain to Source |
-30 V |
|
Voltage, Drain to Source |
-30 V |
|
Voltage, Forward, Diode |
-0.78 V |
|
Voltage, Gate to Source |
±20 V |
|
Width |
0.157" (4mm) |
|
關鍵詞 |