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IRF540NSTRLPBF
IRF540NSTRLPBF -
MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 44Milliohms; ID 33A; D2Pak; PD 130W; VGS +/-20
聲明:圖片僅供參考,請(qǐng)以實(shí)物為準(zhǔn)!
制造商:
International Rectifier
International Rectifier
制造商產(chǎn)品編號(hào):
IRF540NSTRLPBF
倉(cāng)庫(kù)庫(kù)存編號(hào):
70017673
技術(shù)數(shù)據(jù)表:
Datasheet
訂購(gòu)熱線:
400-900-3095 0755-21000796, QQ:
800152669
, Email:
sales@szcwdz.com
由于產(chǎn)品數(shù)據(jù)庫(kù)龐大,部分產(chǎn)品信息可能未能及時(shí)更新,下單前請(qǐng)與銷售人員確認(rèn)好實(shí)時(shí)在庫(kù)數(shù)量,謝謝合作!
IRF540NSTRLPBF產(chǎn)品概述
HEXFET® N-Channel Power MOSFET up to 50A, Infineon
HEXFET® Power MOSFETs present a variety of rugged single N-channel devices for AC-DC and DC-DC power supplies to audio and consumer electronics, motor control and lighting and home appliances.
IRF540NSTRLPBF產(chǎn)品信息
Brand/Series
HEXFET Series
Capacitance, Input
1960 pF @ 25 V
Channel Mode
Enhancement
Channel Type
N
Configuration
Single
Current, Drain
33 A
Dimensions
10.67 x 9.65 x 4.83 mm
Gate Charge, Total
71 nC
Height
0.19" (4.83mm)
Length
0.42" (10.67mm)
Mounting Type
Surface Mount
Number of Elements per Chip
1
Number of Pins
3
Package Type
D2PAK
Polarization
N-Channel
Power Dissipation
130 W
Resistance, Drain to Source On
44 mΩ
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
-55 °C
Temperature, Operating, Range
-55 to +175 °C
Time, Turn-Off Delay
39 ns
Time, Turn-On Delay
11 ns
Transconductance, Forward
21 S
Typical Gate Charge @ Vgs
Maximum of 71 nC @ 10 V
Voltage, Breakdown, Drain to Source
100 V
Voltage, Drain to Source
100 V
Voltage, Forward, Diode
1.2 V
Voltage, Gate to Source
±20 V
Width
0.38" (9.65mm)
關(guān)鍵詞
IRF540NSTRLPBF相關(guān)搜索
Brand/Series HEXFET Series
International Rectifier Brand/Series HEXFET Series
MOSFET Transistors Brand/Series HEXFET Series
International Rectifier MOSFET Transistors Brand/Series HEXFET Series
Capacitance, Input 1960 pF @ 25 V
International Rectifier Capacitance, Input 1960 pF @ 25 V
MOSFET Transistors Capacitance, Input 1960 pF @ 25 V
International Rectifier MOSFET Transistors Capacitance, Input 1960 pF @ 25 V
Channel Mode Enhancement
International Rectifier Channel Mode Enhancement
MOSFET Transistors Channel Mode Enhancement
International Rectifier MOSFET Transistors Channel Mode Enhancement
Channel Type N
International Rectifier Channel Type N
MOSFET Transistors Channel Type N
International Rectifier MOSFET Transistors Channel Type N
Configuration Single
International Rectifier Configuration Single
MOSFET Transistors Configuration Single
International Rectifier MOSFET Transistors Configuration Single
Current, Drain 33 A
International Rectifier Current, Drain 33 A
MOSFET Transistors Current, Drain 33 A
International Rectifier MOSFET Transistors Current, Drain 33 A
Dimensions 10.67 x 9.65 x 4.83 mm
International Rectifier Dimensions 10.67 x 9.65 x 4.83 mm
MOSFET Transistors Dimensions 10.67 x 9.65 x 4.83 mm
International Rectifier MOSFET Transistors Dimensions 10.67 x 9.65 x 4.83 mm
Gate Charge, Total 71 nC
International Rectifier Gate Charge, Total 71 nC
MOSFET Transistors Gate Charge, Total 71 nC
International Rectifier MOSFET Transistors Gate Charge, Total 71 nC
Height 0.19" (4.83mm)
International Rectifier Height 0.19" (4.83mm)
MOSFET Transistors Height 0.19" (4.83mm)
International Rectifier MOSFET Transistors Height 0.19" (4.83mm)
Length 0.42" (10.67mm)
International Rectifier Length 0.42" (10.67mm)
MOSFET Transistors Length 0.42" (10.67mm)
International Rectifier MOSFET Transistors Length 0.42" (10.67mm)
Mounting Type Surface Mount
International Rectifier Mounting Type Surface Mount
MOSFET Transistors Mounting Type Surface Mount
International Rectifier MOSFET Transistors Mounting Type Surface Mount
Number of Elements per Chip 1
International Rectifier Number of Elements per Chip 1
MOSFET Transistors Number of Elements per Chip 1
International Rectifier MOSFET Transistors Number of Elements per Chip 1
Number of Pins 3
International Rectifier Number of Pins 3
MOSFET Transistors Number of Pins 3
International Rectifier MOSFET Transistors Number of Pins 3
Package Type D2PAK
International Rectifier Package Type D2PAK
MOSFET Transistors Package Type D2PAK
International Rectifier MOSFET Transistors Package Type D2PAK
Polarization N-Channel
International Rectifier Polarization N-Channel
MOSFET Transistors Polarization N-Channel
International Rectifier MOSFET Transistors Polarization N-Channel
Power Dissipation 130 W
International Rectifier Power Dissipation 130 W
MOSFET Transistors Power Dissipation 130 W
International Rectifier MOSFET Transistors Power Dissipation 130 W
Resistance, Drain to Source On 44 mΩ
International Rectifier Resistance, Drain to Source On 44 mΩ
MOSFET Transistors Resistance, Drain to Source On 44 mΩ
International Rectifier MOSFET Transistors Resistance, Drain to Source On 44 mΩ
Temperature, Operating, Maximum +175 °C
International Rectifier Temperature, Operating, Maximum +175 °C
MOSFET Transistors Temperature, Operating, Maximum +175 °C
International Rectifier MOSFET Transistors Temperature, Operating, Maximum +175 °C
Temperature, Operating, Minimum -55 °C
International Rectifier Temperature, Operating, Minimum -55 °C
MOSFET Transistors Temperature, Operating, Minimum -55 °C
International Rectifier MOSFET Transistors Temperature, Operating, Minimum -55 °C
Temperature, Operating, Range -55 to +175 °C
International Rectifier Temperature, Operating, Range -55 to +175 °C
MOSFET Transistors Temperature, Operating, Range -55 to +175 °C
International Rectifier MOSFET Transistors Temperature, Operating, Range -55 to +175 °C
Time, Turn-Off Delay 39 ns
International Rectifier Time, Turn-Off Delay 39 ns
MOSFET Transistors Time, Turn-Off Delay 39 ns
International Rectifier MOSFET Transistors Time, Turn-Off Delay 39 ns
Time, Turn-On Delay 11 ns
International Rectifier Time, Turn-On Delay 11 ns
MOSFET Transistors Time, Turn-On Delay 11 ns
International Rectifier MOSFET Transistors Time, Turn-On Delay 11 ns
Transconductance, Forward 21 S
International Rectifier Transconductance, Forward 21 S
MOSFET Transistors Transconductance, Forward 21 S
International Rectifier MOSFET Transistors Transconductance, Forward 21 S
Typical Gate Charge @ Vgs Maximum of 71 nC @ 10 V
International Rectifier Typical Gate Charge @ Vgs Maximum of 71 nC @ 10 V
MOSFET Transistors Typical Gate Charge @ Vgs Maximum of 71 nC @ 10 V
International Rectifier MOSFET Transistors Typical Gate Charge @ Vgs Maximum of 71 nC @ 10 V
Voltage, Breakdown, Drain to Source 100 V
International Rectifier Voltage, Breakdown, Drain to Source 100 V
MOSFET Transistors Voltage, Breakdown, Drain to Source 100 V
International Rectifier MOSFET Transistors Voltage, Breakdown, Drain to Source 100 V
Voltage, Drain to Source 100 V
International Rectifier Voltage, Drain to Source 100 V
MOSFET Transistors Voltage, Drain to Source 100 V
International Rectifier MOSFET Transistors Voltage, Drain to Source 100 V
Voltage, Forward, Diode 1.2 V
International Rectifier Voltage, Forward, Diode 1.2 V
MOSFET Transistors Voltage, Forward, Diode 1.2 V
International Rectifier MOSFET Transistors Voltage, Forward, Diode 1.2 V
Voltage, Gate to Source ±20 V
International Rectifier Voltage, Gate to Source ±20 V
MOSFET Transistors Voltage, Gate to Source ±20 V
International Rectifier MOSFET Transistors Voltage, Gate to Source ±20 V
Width 0.38" (9.65mm)
International Rectifier Width 0.38" (9.65mm)
MOSFET Transistors Width 0.38" (9.65mm)
International Rectifier MOSFET Transistors Width 0.38" (9.65mm)
郵箱:
sales@szcwdz.com
Q Q:
800152669
手機(jī)網(wǎng)站:
m.szcwdz.com
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