Brand/Series |
HEXFET Series |
|
Capacitance, Input |
2900 pF @ 25 V |
|
Channel Mode |
Enhancement |
|
Channel Type |
N |
|
Configuration |
Dual Drain |
|
Current, Drain |
59 A |
|
Dimensions |
10.67 x 4.83 x 9.02 mm |
|
Gate Charge, Total |
82 nC |
|
Height |
0.355" (9.02mm) |
|
Length |
0.42" (10.67mm) |
|
Mounting Type |
Through Hole |
|
Number of Elements per Chip |
1 |
|
Number of Pins |
3 |
|
Package Type |
TO-220AB |
|
Polarization |
N-Channel |
|
Power Dissipation |
160 W |
|
Resistance, Drain to Source On |
18 mΩ |
|
Temperature, Operating, Maximum |
+175 °C |
|
Temperature, Operating, Minimum |
-55 °C |
|
Temperature, Operating, Range |
-55 to +175 °C |
|
Time, Turn-Off Delay |
41 ns |
|
Time, Turn-On Delay |
17 ns |
|
Transconductance, Forward |
35 S |
|
Typical Gate Charge @ Vgs |
82 nC @ 10 V |
|
Voltage, Breakdown, Drain to Source |
100 V |
|
Voltage, Drain to Source |
100 V |
|
Voltage, Forward, Diode |
1.3 V |
|
Voltage, Gate to Source |
±20 V |
|
Width |
0.19" (4.83mm) |
|
關(guān)鍵詞 |