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IRF3710SPBF - 

MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 23Milliohms; ID 57A; D2Pak; PD 200W; VGS +/-20

International Rectifier IRF3710SPBF
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制造商產(chǎn)品編號(hào)：
IRF3710SPBF
倉(cāng)庫(kù)庫(kù)存編號(hào)：
70016956
技術(shù)數(shù)據(jù)表：
View IRF3710SPBF Datasheet Datasheet
訂購(gòu)熱線： 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
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IRF3710SPBF產(chǎn)品概述

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. The through-hole version (IRF3710L) is available for low-profile applications.

Features:
  • Advanced Process Technology
  • Ultra Low On-Resistance
  • Dynamic dv/dt Rating
  • 175°C Operating Temperature
  • Fast Switching
  • Fully Avalanche Rated
  • Lead-Free

    • IRF3710SPBF產(chǎn)品信息

      Brand/Series  HEXFET Series  
      Capacitance, Input  3130 pF @ 25 V  
      Channel Mode  Enhancement  
      Channel Type  N  
      Configuration  Dual Drain  
      Current, Drain  57 A  
      Dimensions  10.67 x 9.65 x 4.83 mm  
      Gate Charge, Total  130 nC  
      Height  0.19" (4.83mm)  
      Length  0.42" (10.67mm)  
      Mounting Type  Surface Mount  
      Number of Elements per Chip  1  
      Number of Pins  3  
      Package Type  D2PAK  
      Polarization  N-Channel  
      Power Dissipation  200 W  
      Resistance, Drain to Source On  23 mΩ  
      Temperature, Operating, Maximum  +175 °C  
      Temperature, Operating, Minimum  -55 °C  
      Temperature, Operating, Range  -55 to +175 °C  
      Time, Turn-Off Delay  45 ns  
      Time, Turn-On Delay  12 ns  
      Transconductance, Forward  32 S  
      Typical Gate Charge @ Vgs  Maximum of 130 nC @ 10 V  
      Voltage, Breakdown, Drain to Source  100 V  
      Voltage, Drain to Source  100 V  
      Voltage, Forward, Diode  1.2 V  
      Voltage, Gate to Source  ±20 V  
      Width  0.38" (9.65mm)  
    關(guān)鍵詞         

    IRF3710SPBF相關(guān)搜索

    Brand/Series HEXFET Series  International Rectifier Brand/Series HEXFET Series  MOSFET Transistors Brand/Series HEXFET Series  International Rectifier MOSFET Transistors Brand/Series HEXFET Series   Capacitance, Input 3130 pF @ 25 V  International Rectifier Capacitance, Input 3130 pF @ 25 V  MOSFET Transistors Capacitance, Input 3130 pF @ 25 V  International Rectifier MOSFET Transistors Capacitance, Input 3130 pF @ 25 V   Channel Mode Enhancement  International Rectifier Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  International Rectifier MOSFET Transistors Channel Mode Enhancement   Channel Type N  International Rectifier Channel Type N  MOSFET Transistors Channel Type N  International Rectifier MOSFET Transistors Channel Type N   Configuration Dual Drain  International Rectifier Configuration Dual Drain  MOSFET Transistors Configuration Dual Drain  International Rectifier MOSFET Transistors Configuration Dual Drain   Current, Drain 57 A  International Rectifier Current, Drain 57 A  MOSFET Transistors Current, Drain 57 A  International Rectifier MOSFET Transistors Current, Drain 57 A   Dimensions 10.67 x 9.65 x 4.83 mm  International Rectifier Dimensions 10.67 x 9.65 x 4.83 mm  MOSFET Transistors Dimensions 10.67 x 9.65 x 4.83 mm  International Rectifier MOSFET Transistors Dimensions 10.67 x 9.65 x 4.83 mm   Gate Charge, Total 130 nC  International Rectifier Gate Charge, Total 130 nC  MOSFET Transistors Gate Charge, Total 130 nC  International Rectifier MOSFET Transistors Gate Charge, Total 130 nC   Height 0.19" (4.83mm)  International Rectifier Height 0.19" (4.83mm)  MOSFET Transistors Height 0.19" (4.83mm)  International Rectifier MOSFET Transistors Height 0.19" (4.83mm)   Length 0.42" (10.67mm)  International Rectifier Length 0.42" (10.67mm)  MOSFET Transistors Length 0.42" (10.67mm)  International Rectifier MOSFET Transistors Length 0.42" (10.67mm)   Mounting Type Surface Mount  International Rectifier Mounting Type Surface Mount  MOSFET Transistors Mounting Type Surface Mount  International Rectifier MOSFET Transistors Mounting Type Surface Mount   Number of Elements per Chip 1  International Rectifier Number of Elements per Chip 1  MOSFET Transistors Number of Elements per Chip 1  International Rectifier MOSFET Transistors Number of Elements per Chip 1   Number of Pins 3  International Rectifier Number of Pins 3  MOSFET Transistors Number of Pins 3  International Rectifier MOSFET Transistors Number of Pins 3   Package Type D2PAK  International Rectifier Package Type D2PAK  MOSFET Transistors Package Type D2PAK  International Rectifier MOSFET Transistors Package Type D2PAK   Polarization N-Channel  International Rectifier Polarization N-Channel  MOSFET Transistors Polarization N-Channel  International Rectifier MOSFET Transistors Polarization N-Channel   Power Dissipation 200 W  International Rectifier Power Dissipation 200 W  MOSFET Transistors Power Dissipation 200 W  International Rectifier MOSFET Transistors Power Dissipation 200 W   Resistance, Drain to Source On 23 mΩ  International Rectifier Resistance, Drain to Source On 23 mΩ  MOSFET Transistors Resistance, Drain to Source On 23 mΩ  International Rectifier MOSFET Transistors Resistance, Drain to Source On 23 mΩ   Temperature, Operating, Maximum +175 °C  International Rectifier Temperature, Operating, Maximum +175 °C  MOSFET Transistors Temperature, Operating, Maximum +175 °C  International Rectifier MOSFET Transistors Temperature, Operating, Maximum +175 °C   Temperature, Operating, Minimum -55 °C  International Rectifier Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  International Rectifier MOSFET Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +175 °C  International Rectifier Temperature, Operating, Range -55 to +175 °C  MOSFET Transistors Temperature, Operating, Range -55 to +175 °C  International Rectifier MOSFET Transistors Temperature, Operating, Range -55 to +175 °C   Time, Turn-Off Delay 45 ns  International Rectifier Time, Turn-Off Delay 45 ns  MOSFET Transistors Time, Turn-Off Delay 45 ns  International Rectifier MOSFET Transistors Time, Turn-Off Delay 45 ns   Time, Turn-On Delay 12 ns  International Rectifier Time, Turn-On Delay 12 ns  MOSFET Transistors Time, Turn-On Delay 12 ns  International Rectifier MOSFET Transistors Time, Turn-On Delay 12 ns   Transconductance, Forward 32 S  International Rectifier Transconductance, Forward 32 S  MOSFET Transistors Transconductance, Forward 32 S  International Rectifier MOSFET Transistors Transconductance, Forward 32 S   Typical Gate Charge @ Vgs Maximum of 130 nC @ 10 V  International Rectifier Typical Gate Charge @ Vgs Maximum of 130 nC @ 10 V  MOSFET Transistors Typical Gate Charge @ Vgs Maximum of 130 nC @ 10 V  International Rectifier MOSFET Transistors Typical Gate Charge @ Vgs Maximum of 130 nC @ 10 V   Voltage, Breakdown, Drain to Source 100 V  International Rectifier Voltage, Breakdown, Drain to Source 100 V  MOSFET Transistors Voltage, Breakdown, Drain to Source 100 V  International Rectifier MOSFET Transistors Voltage, Breakdown, Drain to Source 100 V   Voltage, Drain to Source 100 V  International Rectifier Voltage, Drain to Source 100 V  MOSFET Transistors Voltage, Drain to Source 100 V  International Rectifier MOSFET Transistors Voltage, Drain to Source 100 V   Voltage, Forward, Diode 1.2 V  International Rectifier Voltage, Forward, Diode 1.2 V  MOSFET Transistors Voltage, Forward, Diode 1.2 V  International Rectifier MOSFET Transistors Voltage, Forward, Diode 1.2 V   Voltage, Gate to Source ±20 V  International Rectifier Voltage, Gate to Source ±20 V  MOSFET Transistors Voltage, Gate to Source ±20 V  International Rectifier MOSFET Transistors Voltage, Gate to Source ±20 V   Width 0.38" (9.65mm)  International Rectifier Width 0.38" (9.65mm)  MOSFET Transistors Width 0.38" (9.65mm)  International Rectifier MOSFET Transistors Width 0.38" (9.65mm)  
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