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1N5407-E3/54 - 

Diode, Std; 3A; 800V; DO-201AD; Tape/Reel

General Semiconductor / Vishay 1N5407-E3/54
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制造商產(chǎn)品編號(hào)：
1N5407-E3/54
倉庫庫存編號(hào)：
70217544
技術(shù)數(shù)據(jù)表：
View 1N5407-E3/54 Datasheet Datasheet
訂購熱線： 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
由于產(chǎn)品數(shù)據(jù)庫龐大，部分產(chǎn)品信息可能未能及時(shí)更新，下單前請與銷售人員確認(rèn)好實(shí)時(shí)在庫數(shù)量，謝謝合作！

1N5407-E3/54產(chǎn)品概述

Features:
  • Low Forward Voltage Drop
  • Low Leakage Current
  • High Forward Surge Capability
  • Solder Dip 260°C, 40 s
  • Component in Accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

    Applications:
    For use in general purpose rectification of power supplies, inverters, converters and freewheeling diodes application.
    (Note: These devices are not Q101 qualified.)

    • 1N5407-E3/54產(chǎn)品信息

      Brand/Series  1N5407 Series  
      Capacitance, Junction  30 pF  
      Configuration  Single  
      Current, Forward, Continuous  3 A  
      Current, Leakage, Reverse  5 μA  
      Current, On-State, Non-Repetitive Peak  200 A  
      Current, Peak  500 μA  
      Current, Surge  200 A  
      Diameter  5.3 mm  
      Dimensions  5.3 Dia. x 9.5 L mm  
      Diode Type  General Purpose Rectifier  
      Junction Capacitance  30 pF  
      Length  0.374" (9.5mm)  
      Mounting Type  Through Hole  
      Number of Pins  2  
      Package Type  DO-201AD  
      Primary Type  Rectifier  
      Temperature, Operating  –50 to +150 °C  
      Temperature, Operating, Maximum  +150 °C  
      Temperature, Operating, Minimum  -50 °C  
      Temperature, Operating, Range  -50 to +150 °C  
      Thermal Resistance, Junction to Ambient  20 °C/W  
      Voltage, Forward  1.2 V  
      Voltage, Repetitive Peak  800 V  
      Voltage, RMS, Maximum  560 V  
    關(guān)鍵詞         

    1N5407-E3/54相關(guān)搜索

    Brand/Series 1N5407 Series  General Semiconductor / Vishay Brand/Series 1N5407 Series  Rectifier & Schottky Diodes Brand/Series 1N5407 Series  General Semiconductor / Vishay Rectifier & Schottky Diodes Brand/Series 1N5407 Series   Capacitance, Junction 30 pF  General Semiconductor / Vishay Capacitance, Junction 30 pF  Rectifier & Schottky Diodes Capacitance, Junction 30 pF  General Semiconductor / Vishay Rectifier & Schottky Diodes Capacitance, Junction 30 pF   Configuration Single  General Semiconductor / Vishay Configuration Single  Rectifier & Schottky Diodes Configuration Single  General Semiconductor / Vishay Rectifier & Schottky Diodes Configuration Single   Current, Forward, Continuous 3 A  General Semiconductor / Vishay Current, Forward, Continuous 3 A  Rectifier & Schottky Diodes Current, Forward, Continuous 3 A  General Semiconductor / Vishay Rectifier & Schottky Diodes Current, Forward, Continuous 3 A   Current, Leakage, Reverse 5 μA  General Semiconductor / Vishay Current, Leakage, Reverse 5 μA  Rectifier & Schottky Diodes Current, Leakage, Reverse 5 μA  General Semiconductor / Vishay Rectifier & Schottky Diodes Current, Leakage, Reverse 5 μA   Current, On-State, Non-Repetitive Peak 200 A  General Semiconductor / Vishay Current, On-State, Non-Repetitive Peak 200 A  Rectifier & Schottky Diodes Current, On-State, Non-Repetitive Peak 200 A  General Semiconductor / Vishay Rectifier & Schottky Diodes Current, On-State, Non-Repetitive Peak 200 A   Current, Peak 500 μA  General Semiconductor / Vishay Current, Peak 500 μA  Rectifier & Schottky Diodes Current, Peak 500 μA  General Semiconductor / Vishay Rectifier & Schottky Diodes Current, Peak 500 μA   Current, Surge 200 A  General Semiconductor / Vishay Current, Surge 200 A  Rectifier & Schottky Diodes Current, Surge 200 A  General Semiconductor / Vishay Rectifier & Schottky Diodes Current, Surge 200 A   Diameter 5.3 mm  General Semiconductor / Vishay Diameter 5.3 mm  Rectifier & Schottky Diodes Diameter 5.3 mm  General Semiconductor / Vishay Rectifier & Schottky Diodes Diameter 5.3 mm   Dimensions 5.3 Dia. x 9.5 L mm  General Semiconductor / Vishay Dimensions 5.3 Dia. x 9.5 L mm  Rectifier & Schottky Diodes Dimensions 5.3 Dia. x 9.5 L mm  General Semiconductor / Vishay Rectifier & Schottky Diodes Dimensions 5.3 Dia. x 9.5 L mm   Diode Type General Purpose Rectifier  General Semiconductor / Vishay Diode Type General Purpose Rectifier  Rectifier & Schottky Diodes Diode Type General Purpose Rectifier  General Semiconductor / Vishay Rectifier & Schottky Diodes Diode Type General Purpose Rectifier   Junction Capacitance 30 pF  General Semiconductor / Vishay Junction Capacitance 30 pF  Rectifier & Schottky Diodes Junction Capacitance 30 pF  General Semiconductor / Vishay Rectifier & Schottky Diodes Junction Capacitance 30 pF   Length 0.374" (9.5mm)  General Semiconductor / Vishay Length 0.374" (9.5mm)  Rectifier & Schottky Diodes Length 0.374" (9.5mm)  General Semiconductor / Vishay Rectifier & Schottky Diodes Length 0.374" (9.5mm)   Mounting Type Through Hole  General Semiconductor / Vishay Mounting Type Through Hole  Rectifier & Schottky Diodes Mounting Type Through Hole  General Semiconductor / Vishay Rectifier & Schottky Diodes Mounting Type Through Hole   Number of Pins 2  General Semiconductor / Vishay Number of Pins 2  Rectifier & Schottky Diodes Number of Pins 2  General Semiconductor / Vishay Rectifier & Schottky Diodes Number of Pins 2   Package Type DO-201AD  General Semiconductor / Vishay Package Type DO-201AD  Rectifier & Schottky Diodes Package Type DO-201AD  General Semiconductor / Vishay Rectifier & Schottky Diodes Package Type DO-201AD   Primary Type Rectifier  General Semiconductor / Vishay Primary Type Rectifier  Rectifier & Schottky Diodes Primary Type Rectifier  General Semiconductor / Vishay Rectifier & Schottky Diodes Primary Type Rectifier   Temperature, Operating –50 to +150 °C  General Semiconductor / Vishay Temperature, Operating –50 to +150 °C  Rectifier & Schottky Diodes Temperature, Operating –50 to +150 °C  General Semiconductor / Vishay Rectifier & Schottky Diodes Temperature, Operating –50 to +150 °C   Temperature, Operating, Maximum +150 °C  General Semiconductor / Vishay Temperature, Operating, Maximum +150 °C  Rectifier & Schottky Diodes Temperature, Operating, Maximum +150 °C  General Semiconductor / Vishay Rectifier & Schottky Diodes Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -50 °C  General Semiconductor / Vishay Temperature, Operating, Minimum -50 °C  Rectifier & Schottky Diodes Temperature, Operating, Minimum -50 °C  General Semiconductor / Vishay Rectifier & Schottky Diodes Temperature, Operating, Minimum -50 °C   Temperature, Operating, Range -50 to +150 °C  General Semiconductor / Vishay Temperature, Operating, Range -50 to +150 °C  Rectifier & Schottky Diodes Temperature, Operating, Range -50 to +150 °C  General Semiconductor / Vishay Rectifier & Schottky Diodes Temperature, Operating, Range -50 to +150 °C   Thermal Resistance, Junction to Ambient 20 °C/W  General Semiconductor / Vishay Thermal Resistance, Junction to Ambient 20 °C/W  Rectifier & Schottky Diodes Thermal Resistance, Junction to Ambient 20 °C/W  General Semiconductor / Vishay Rectifier & Schottky Diodes Thermal Resistance, Junction to Ambient 20 °C/W   Voltage, Forward 1.2 V  General Semiconductor / Vishay Voltage, Forward 1.2 V  Rectifier & Schottky Diodes Voltage, Forward 1.2 V  General Semiconductor / Vishay Rectifier & Schottky Diodes Voltage, Forward 1.2 V   Voltage, Repetitive Peak 800 V  General Semiconductor / Vishay Voltage, Repetitive Peak 800 V  Rectifier & Schottky Diodes Voltage, Repetitive Peak 800 V  General Semiconductor / Vishay Rectifier & Schottky Diodes Voltage, Repetitive Peak 800 V   Voltage, RMS, Maximum 560 V  General Semiconductor / Vishay Voltage, RMS, Maximum 560 V  Rectifier & Schottky Diodes Voltage, RMS, Maximum 560 V  General Semiconductor / Vishay Rectifier & Schottky Diodes Voltage, RMS, Maximum 560 V  
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    QQ:800152669
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