amphenol代理商
專業(yè)銷售Amphenol(安費(fèi)諾)全系列產(chǎn)品-英國(guó)2號(hào)倉(cāng)庫(kù)
美國(guó)1號(hào)分類選型新加坡2號(hào)分類選型英國(guó)10號(hào)分類選型英國(guó)2號(hào)分類選型日本5號(hào)分類選型

在本站結(jié)果里搜索:    
熱門搜索詞:  Connectors  8910DPA43V02  Amphenol  UVZSeries 160VDC  70084122  IM21-14-CDTRI

FMV11N90E - 

IC, MOSFET; N-Channel, FAP-E3 Planar; 900V; 11A; 120W; TO-220F(SLS)

Fuji Semiconductor FMV11N90E
聲明:圖片僅供參考,請(qǐng)以實(shí)物為準(zhǔn)!
制造商產(chǎn)品編號(hào):
FMV11N90E
倉(cāng)庫(kù)庫(kù)存編號(hào):
70241497
技術(shù)數(shù)據(jù)表:
View FMV11N90E Datasheet Datasheet
訂購(gòu)熱線: 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
由于產(chǎn)品數(shù)據(jù)庫(kù)龐大,部分產(chǎn)品信息可能未能及時(shí)更新,下單前請(qǐng)與銷售人員確認(rèn)好實(shí)時(shí)在庫(kù)數(shù)量,謝謝合作!

FMV11N90E產(chǎn)品概述

Features:
  • Maintains Both Low Power Loss and Low Noise
  • Lower RDS(ON) Characteristic
  • More Controllable Switching dV/dt By Gate Resistance
  • Smaller VGS Ringing Waveform During Switching
  • Narrow Band of the Gate Threshold Voltage (4.0 ±0.5 V)
  • High Avalanche Durability
    Applications:
  • Switching Regulators
  • UPS
  • DC-DC Converters
  • FMV11N90E產(chǎn)品信息

      Capacitance, Input  2300 pF @ 25 V  
      Channel Mode  Enhancement  
      Channel Type  N  
      Configuration  Single  
      Current, Drain  ±11 A  
      Dimensions  10 x 4.5 x 15 mm  
      Gate Charge, Total  60 nC  
      Height  0.591" (15mm)  
      Length  0.393" (10mm)  
      Mounting Type  Through Hole  
      Number of Elements per Chip  1  
      Number of Pins  3  
      Operating and Storage Temperature  -55 to 150 °C  
      Package Type  TO-220F  
      Polarization  N-Channel  
      Power Dissipation  120 W  
      Resistance, Drain to Source On  1 Ω  
      Resistance, Thermal, Junction to Case  1.0417 °C/W  
      Temperature, Operating, Maximum  +150 °C  
      Temperature, Operating, Minimum  -55 °C  
      Temperature, Operating, Range  -55 to +150 °C  
      Thermal Resistance, Junction to Ambient  58 °C/W  
      Time, Turn-Off Delay  124 ns  
      Time, Turn-On Delay  37 ns  
      Transconductance, Forward  13 S  
      Typical Gate Charge @ Vgs  60 nC @ 10 V  
      Voltage, Breakdown, Drain to Source  900 V  
      Voltage, Drain to Source  900 V  
      Voltage, Forward, Diode  1.35 V  
      Voltage, Gate to Source  ±30 V  
      Voltage, Threshold  2.5-3.5 V  
      Width  0.177" (4.5mm)  
    關(guān)鍵詞         

    FMV11N90E相關(guān)搜索

    Capacitance, Input 2300 pF @ 25 V  Fuji Semiconductor Capacitance, Input 2300 pF @ 25 V  MOSFET Transistors Capacitance, Input 2300 pF @ 25 V  Fuji Semiconductor MOSFET Transistors Capacitance, Input 2300 pF @ 25 V   Channel Mode Enhancement  Fuji Semiconductor Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  Fuji Semiconductor MOSFET Transistors Channel Mode Enhancement   Channel Type N  Fuji Semiconductor Channel Type N  MOSFET Transistors Channel Type N  Fuji Semiconductor MOSFET Transistors Channel Type N   Configuration Single  Fuji Semiconductor Configuration Single  MOSFET Transistors Configuration Single  Fuji Semiconductor MOSFET Transistors Configuration Single   Current, Drain ±11 A  Fuji Semiconductor Current, Drain ±11 A  MOSFET Transistors Current, Drain ±11 A  Fuji Semiconductor MOSFET Transistors Current, Drain ±11 A   Dimensions 10 x 4.5 x 15 mm  Fuji Semiconductor Dimensions 10 x 4.5 x 15 mm  MOSFET Transistors Dimensions 10 x 4.5 x 15 mm  Fuji Semiconductor MOSFET Transistors Dimensions 10 x 4.5 x 15 mm   Gate Charge, Total 60 nC  Fuji Semiconductor Gate Charge, Total 60 nC  MOSFET Transistors Gate Charge, Total 60 nC  Fuji Semiconductor MOSFET Transistors Gate Charge, Total 60 nC   Height 0.591" (15mm)  Fuji Semiconductor Height 0.591" (15mm)  MOSFET Transistors Height 0.591" (15mm)  Fuji Semiconductor MOSFET Transistors Height 0.591" (15mm)   Length 0.393" (10mm)  Fuji Semiconductor Length 0.393" (10mm)  MOSFET Transistors Length 0.393" (10mm)  Fuji Semiconductor MOSFET Transistors Length 0.393" (10mm)   Mounting Type Through Hole  Fuji Semiconductor Mounting Type Through Hole  MOSFET Transistors Mounting Type Through Hole  Fuji Semiconductor MOSFET Transistors Mounting Type Through Hole   Number of Elements per Chip 1  Fuji Semiconductor Number of Elements per Chip 1  MOSFET Transistors Number of Elements per Chip 1  Fuji Semiconductor MOSFET Transistors Number of Elements per Chip 1   Number of Pins 3  Fuji Semiconductor Number of Pins 3  MOSFET Transistors Number of Pins 3  Fuji Semiconductor MOSFET Transistors Number of Pins 3   Operating and Storage Temperature -55 to 150 °C  Fuji Semiconductor Operating and Storage Temperature -55 to 150 °C  MOSFET Transistors Operating and Storage Temperature -55 to 150 °C  Fuji Semiconductor MOSFET Transistors Operating and Storage Temperature -55 to 150 °C   Package Type TO-220F  Fuji Semiconductor Package Type TO-220F  MOSFET Transistors Package Type TO-220F  Fuji Semiconductor MOSFET Transistors Package Type TO-220F   Polarization N-Channel  Fuji Semiconductor Polarization N-Channel  MOSFET Transistors Polarization N-Channel  Fuji Semiconductor MOSFET Transistors Polarization N-Channel   Power Dissipation 120 W  Fuji Semiconductor Power Dissipation 120 W  MOSFET Transistors Power Dissipation 120 W  Fuji Semiconductor MOSFET Transistors Power Dissipation 120 W   Resistance, Drain to Source On 1 Ω  Fuji Semiconductor Resistance, Drain to Source On 1 Ω  MOSFET Transistors Resistance, Drain to Source On 1 Ω  Fuji Semiconductor MOSFET Transistors Resistance, Drain to Source On 1 Ω   Resistance, Thermal, Junction to Case 1.0417 °C/W  Fuji Semiconductor Resistance, Thermal, Junction to Case 1.0417 °C/W  MOSFET Transistors Resistance, Thermal, Junction to Case 1.0417 °C/W  Fuji Semiconductor MOSFET Transistors Resistance, Thermal, Junction to Case 1.0417 °C/W   Temperature, Operating, Maximum +150 °C  Fuji Semiconductor Temperature, Operating, Maximum +150 °C  MOSFET Transistors Temperature, Operating, Maximum +150 °C  Fuji Semiconductor MOSFET Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  Fuji Semiconductor Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  Fuji Semiconductor MOSFET Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  Fuji Semiconductor Temperature, Operating, Range -55 to +150 °C  MOSFET Transistors Temperature, Operating, Range -55 to +150 °C  Fuji Semiconductor MOSFET Transistors Temperature, Operating, Range -55 to +150 °C   Thermal Resistance, Junction to Ambient 58 °C/W  Fuji Semiconductor Thermal Resistance, Junction to Ambient 58 °C/W  MOSFET Transistors Thermal Resistance, Junction to Ambient 58 °C/W  Fuji Semiconductor MOSFET Transistors Thermal Resistance, Junction to Ambient 58 °C/W   Time, Turn-Off Delay 124 ns  Fuji Semiconductor Time, Turn-Off Delay 124 ns  MOSFET Transistors Time, Turn-Off Delay 124 ns  Fuji Semiconductor MOSFET Transistors Time, Turn-Off Delay 124 ns   Time, Turn-On Delay 37 ns  Fuji Semiconductor Time, Turn-On Delay 37 ns  MOSFET Transistors Time, Turn-On Delay 37 ns  Fuji Semiconductor MOSFET Transistors Time, Turn-On Delay 37 ns   Transconductance, Forward 13 S  Fuji Semiconductor Transconductance, Forward 13 S  MOSFET Transistors Transconductance, Forward 13 S  Fuji Semiconductor MOSFET Transistors Transconductance, Forward 13 S   Typical Gate Charge @ Vgs 60 nC @ 10 V  Fuji Semiconductor Typical Gate Charge @ Vgs 60 nC @ 10 V  MOSFET Transistors Typical Gate Charge @ Vgs 60 nC @ 10 V  Fuji Semiconductor MOSFET Transistors Typical Gate Charge @ Vgs 60 nC @ 10 V   Voltage, Breakdown, Drain to Source 900 V  Fuji Semiconductor Voltage, Breakdown, Drain to Source 900 V  MOSFET Transistors Voltage, Breakdown, Drain to Source 900 V  Fuji Semiconductor MOSFET Transistors Voltage, Breakdown, Drain to Source 900 V   Voltage, Drain to Source 900 V  Fuji Semiconductor Voltage, Drain to Source 900 V  MOSFET Transistors Voltage, Drain to Source 900 V  Fuji Semiconductor MOSFET Transistors Voltage, Drain to Source 900 V   Voltage, Forward, Diode 1.35 V  Fuji Semiconductor Voltage, Forward, Diode 1.35 V  MOSFET Transistors Voltage, Forward, Diode 1.35 V  Fuji Semiconductor MOSFET Transistors Voltage, Forward, Diode 1.35 V   Voltage, Gate to Source ±30 V  Fuji Semiconductor Voltage, Gate to Source ±30 V  MOSFET Transistors Voltage, Gate to Source ±30 V  Fuji Semiconductor MOSFET Transistors Voltage, Gate to Source ±30 V   Voltage, Threshold 2.5-3.5 V  Fuji Semiconductor Voltage, Threshold 2.5-3.5 V  MOSFET Transistors Voltage, Threshold 2.5-3.5 V  Fuji Semiconductor MOSFET Transistors Voltage, Threshold 2.5-3.5 V   Width 0.177" (4.5mm)  Fuji Semiconductor Width 0.177" (4.5mm)  MOSFET Transistors Width 0.177" (4.5mm)  Fuji Semiconductor MOSFET Transistors Width 0.177" (4.5mm)  
    電話:400-900-3095
    QQ:800152669
    關(guān)于我們 | Amphenol簡(jiǎn)介 | Amphenol產(chǎn)品 | Amphenol產(chǎn)品應(yīng)用 | Amphenol動(dòng)態(tài) | 按系列選型 | 按產(chǎn)品規(guī)格選型 | Amphenol選型手冊(cè) | 付款方式 | 聯(lián)系我們
    Copyright © 2017 m.habitrun.com All Rights Reserved. 技術(shù)支持:電子元器件 ICP備案證書(shū)號(hào):粵ICP備11103613號(hào)