amphenol代理商
專(zhuān)業(yè)銷(xiāo)售Amphenol(安費(fèi)諾)全系列產(chǎn)品-英國(guó)2號(hào)倉(cāng)庫(kù)
庫(kù)存查詢(xún)
美國(guó)1號(hào)分類(lèi)選型新加坡2號(hào)分類(lèi)選型英國(guó)10號(hào)分類(lèi)選型英國(guó)2號(hào)分類(lèi)選型日本5號(hào)分類(lèi)選型

在本站結(jié)果里搜索:    
熱門(mén)搜索詞:  Connectors  8910DPA43V02  Amphenol  UVZSeries 160VDC  70084122  IM21-14-CDTRI

FMP20N60S1 - 

IC, MOSFET; N-Channel, Super Junction; 600V; 20A; 150W; TO-220AB

Fuji Semiconductor FMP20N60S1
聲明:圖片僅供參考,請(qǐng)以實(shí)物為準(zhǔn)!
制造商產(chǎn)品編號(hào):
FMP20N60S1
倉(cāng)庫(kù)庫(kù)存編號(hào):
70241452
技術(shù)數(shù)據(jù)表:
View FMP20N60S1 Datasheet Datasheet
訂購(gòu)熱線(xiàn): 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
由于產(chǎn)品數(shù)據(jù)庫(kù)龐大,部分產(chǎn)品信息可能未能及時(shí)更新,下單前請(qǐng)與銷(xiāo)售人員確認(rèn)好實(shí)時(shí)在庫(kù)數(shù)量,謝謝合作!

FMP20N60S1產(chǎn)品概述

Features:
  • Low On-State Resistance
  • Low Switching Loss
  • Easy to Use (More Controllable Switching dV/dt by Rg
    Applications:
  • UPS
  • Server
  • Telecom
  • Power Conditioner System
  • Power Supply
  • FMP20N60S1產(chǎn)品信息

      Capacitance, Input  1470 pF @ 10 V  
      Channel Mode  Enhancement  
      Channel Type  N  
      Configuration  Single  
      Current, Drain  ±20 A  
      Dimensions  10 x 4.5 x 15 mm  
      Gate Charge, Total  48 nC  
      Height  0.591" (15mm)  
      Length  0.393" (10mm)  
      Mounting Type  Through Hole  
      Number of Elements per Chip  1  
      Number of Pins  3  
      Operating and Storage Temperature  -55 to 150 °C  
      Package Type  TO-220AB  
      Polarization  N-Channel  
      Power Dissipation  150 W  
      Resistance, Drain to Source On  0.19 Ω  
      Resistance, Thermal, Junction to Case  0.83 °C/W  
      Temperature, Operating, Maximum  +150 °C  
      Temperature, Operating, Minimum  -55 °C  
      Temperature, Operating, Range  -55 to +150 °C  
      Thermal Resistance, Junction to Ambient  62 °C/W  
      Time, Turn-Off Delay  22 ns  
      Time, Turn-On Delay  22 ns  
      Transconductance, Forward  17.5 S  
      Typical Gate Charge @ Vgs  48 nC @ 10 V  
      Voltage, Breakdown, Drain to Source  600 V  
      Voltage, Drain to Source  600 V  
      Voltage, Forward, Diode  1.35 V  
      Voltage, Gate to Source  ±30 V  
      Voltage, Threshold  2.5-3.5 V  
      Width  0.177" (4.5mm)  
    關(guān)鍵詞         

    FMP20N60S1相關(guān)搜索

    Capacitance, Input 1470 pF @ 10 V  Fuji Semiconductor Capacitance, Input 1470 pF @ 10 V  MOSFET Transistors Capacitance, Input 1470 pF @ 10 V  Fuji Semiconductor MOSFET Transistors Capacitance, Input 1470 pF @ 10 V   Channel Mode Enhancement  Fuji Semiconductor Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  Fuji Semiconductor MOSFET Transistors Channel Mode Enhancement   Channel Type N  Fuji Semiconductor Channel Type N  MOSFET Transistors Channel Type N  Fuji Semiconductor MOSFET Transistors Channel Type N   Configuration Single  Fuji Semiconductor Configuration Single  MOSFET Transistors Configuration Single  Fuji Semiconductor MOSFET Transistors Configuration Single   Current, Drain ±20 A  Fuji Semiconductor Current, Drain ±20 A  MOSFET Transistors Current, Drain ±20 A  Fuji Semiconductor MOSFET Transistors Current, Drain ±20 A   Dimensions 10 x 4.5 x 15 mm  Fuji Semiconductor Dimensions 10 x 4.5 x 15 mm  MOSFET Transistors Dimensions 10 x 4.5 x 15 mm  Fuji Semiconductor MOSFET Transistors Dimensions 10 x 4.5 x 15 mm   Gate Charge, Total 48 nC  Fuji Semiconductor Gate Charge, Total 48 nC  MOSFET Transistors Gate Charge, Total 48 nC  Fuji Semiconductor MOSFET Transistors Gate Charge, Total 48 nC   Height 0.591" (15mm)  Fuji Semiconductor Height 0.591" (15mm)  MOSFET Transistors Height 0.591" (15mm)  Fuji Semiconductor MOSFET Transistors Height 0.591" (15mm)   Length 0.393" (10mm)  Fuji Semiconductor Length 0.393" (10mm)  MOSFET Transistors Length 0.393" (10mm)  Fuji Semiconductor MOSFET Transistors Length 0.393" (10mm)   Mounting Type Through Hole  Fuji Semiconductor Mounting Type Through Hole  MOSFET Transistors Mounting Type Through Hole  Fuji Semiconductor MOSFET Transistors Mounting Type Through Hole   Number of Elements per Chip 1  Fuji Semiconductor Number of Elements per Chip 1  MOSFET Transistors Number of Elements per Chip 1  Fuji Semiconductor MOSFET Transistors Number of Elements per Chip 1   Number of Pins 3  Fuji Semiconductor Number of Pins 3  MOSFET Transistors Number of Pins 3  Fuji Semiconductor MOSFET Transistors Number of Pins 3   Operating and Storage Temperature -55 to 150 °C  Fuji Semiconductor Operating and Storage Temperature -55 to 150 °C  MOSFET Transistors Operating and Storage Temperature -55 to 150 °C  Fuji Semiconductor MOSFET Transistors Operating and Storage Temperature -55 to 150 °C   Package Type TO-220AB  Fuji Semiconductor Package Type TO-220AB  MOSFET Transistors Package Type TO-220AB  Fuji Semiconductor MOSFET Transistors Package Type TO-220AB   Polarization N-Channel  Fuji Semiconductor Polarization N-Channel  MOSFET Transistors Polarization N-Channel  Fuji Semiconductor MOSFET Transistors Polarization N-Channel   Power Dissipation 150 W  Fuji Semiconductor Power Dissipation 150 W  MOSFET Transistors Power Dissipation 150 W  Fuji Semiconductor MOSFET Transistors Power Dissipation 150 W   Resistance, Drain to Source On 0.19 Ω  Fuji Semiconductor Resistance, Drain to Source On 0.19 Ω  MOSFET Transistors Resistance, Drain to Source On 0.19 Ω  Fuji Semiconductor MOSFET Transistors Resistance, Drain to Source On 0.19 Ω   Resistance, Thermal, Junction to Case 0.83 °C/W  Fuji Semiconductor Resistance, Thermal, Junction to Case 0.83 °C/W  MOSFET Transistors Resistance, Thermal, Junction to Case 0.83 °C/W  Fuji Semiconductor MOSFET Transistors Resistance, Thermal, Junction to Case 0.83 °C/W   Temperature, Operating, Maximum +150 °C  Fuji Semiconductor Temperature, Operating, Maximum +150 °C  MOSFET Transistors Temperature, Operating, Maximum +150 °C  Fuji Semiconductor MOSFET Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  Fuji Semiconductor Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  Fuji Semiconductor MOSFET Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  Fuji Semiconductor Temperature, Operating, Range -55 to +150 °C  MOSFET Transistors Temperature, Operating, Range -55 to +150 °C  Fuji Semiconductor MOSFET Transistors Temperature, Operating, Range -55 to +150 °C   Thermal Resistance, Junction to Ambient 62 °C/W  Fuji Semiconductor Thermal Resistance, Junction to Ambient 62 °C/W  MOSFET Transistors Thermal Resistance, Junction to Ambient 62 °C/W  Fuji Semiconductor MOSFET Transistors Thermal Resistance, Junction to Ambient 62 °C/W   Time, Turn-Off Delay 22 ns  Fuji Semiconductor Time, Turn-Off Delay 22 ns  MOSFET Transistors Time, Turn-Off Delay 22 ns  Fuji Semiconductor MOSFET Transistors Time, Turn-Off Delay 22 ns   Time, Turn-On Delay 22 ns  Fuji Semiconductor Time, Turn-On Delay 22 ns  MOSFET Transistors Time, Turn-On Delay 22 ns  Fuji Semiconductor MOSFET Transistors Time, Turn-On Delay 22 ns   Transconductance, Forward 17.5 S  Fuji Semiconductor Transconductance, Forward 17.5 S  MOSFET Transistors Transconductance, Forward 17.5 S  Fuji Semiconductor MOSFET Transistors Transconductance, Forward 17.5 S   Typical Gate Charge @ Vgs 48 nC @ 10 V  Fuji Semiconductor Typical Gate Charge @ Vgs 48 nC @ 10 V  MOSFET Transistors Typical Gate Charge @ Vgs 48 nC @ 10 V  Fuji Semiconductor MOSFET Transistors Typical Gate Charge @ Vgs 48 nC @ 10 V   Voltage, Breakdown, Drain to Source 600 V  Fuji Semiconductor Voltage, Breakdown, Drain to Source 600 V  MOSFET Transistors Voltage, Breakdown, Drain to Source 600 V  Fuji Semiconductor MOSFET Transistors Voltage, Breakdown, Drain to Source 600 V   Voltage, Drain to Source 600 V  Fuji Semiconductor Voltage, Drain to Source 600 V  MOSFET Transistors Voltage, Drain to Source 600 V  Fuji Semiconductor MOSFET Transistors Voltage, Drain to Source 600 V   Voltage, Forward, Diode 1.35 V  Fuji Semiconductor Voltage, Forward, Diode 1.35 V  MOSFET Transistors Voltage, Forward, Diode 1.35 V  Fuji Semiconductor MOSFET Transistors Voltage, Forward, Diode 1.35 V   Voltage, Gate to Source ±30 V  Fuji Semiconductor Voltage, Gate to Source ±30 V  MOSFET Transistors Voltage, Gate to Source ±30 V  Fuji Semiconductor MOSFET Transistors Voltage, Gate to Source ±30 V   Voltage, Threshold 2.5-3.5 V  Fuji Semiconductor Voltage, Threshold 2.5-3.5 V  MOSFET Transistors Voltage, Threshold 2.5-3.5 V  Fuji Semiconductor MOSFET Transistors Voltage, Threshold 2.5-3.5 V   Width 0.177" (4.5mm)  Fuji Semiconductor Width 0.177" (4.5mm)  MOSFET Transistors Width 0.177" (4.5mm)  Fuji Semiconductor MOSFET Transistors Width 0.177" (4.5mm)  
    電話(huà):400-900-3095
    QQ:800152669
    關(guān)于我們 | Amphenol簡(jiǎn)介 | Amphenol產(chǎn)品 | Amphenol產(chǎn)品應(yīng)用 | Amphenol動(dòng)態(tài) | 按系列選型 | 按產(chǎn)品規(guī)格選型 | Amphenol選型手冊(cè) | 付款方式 | 聯(lián)系我們
    Copyright © 2017 m.habitrun.com All Rights Reserved. 技術(shù)支持:電子元器件 ICP備案證書(shū)號(hào):粵ICP備11103613號(hào)