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2SK725 - 

MOSFET, Power; N-Ch; VDSS 500V; RDS(ON) 0.28Ohm; ID 15A; SC-65; PD 125W; VGS +/-20V; VF

Fuji Semiconductor 2SK725
聲明：圖片僅供參考，請以實物為準！
制造商產品編號：
2SK725
倉庫庫存編號：
70212510
技術數(shù)據(jù)表：
View 2SK725 Datasheet Datasheet
訂購熱線： 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
由于產品數(shù)據(jù)庫龐大，部分產品信息可能未能及時更新，下單前請與銷售人員確認好實時在庫數(shù)量，謝謝合作！

2SK725產品概述

N-Channel Silicon Power MOSFET, 125 W Power Dissipation, 130 ns Time Turn-On
  • High speed switching
  • Low on-resistance
  • No secondary breakdown

  • F-I Series = Low RDS(ON)
  • F-II Series = VGS ±30 V, Reduced Turn Off Time
  • FAP-II Series = High Avalanche Ruggedness
  • FAP-III = Logic Level, High Avalanche Ruggedness
  • FAP-IIS = VGS ±35 V, VGS(th) 4.0 ±0.5 V
  • FAP-IIA = Reduced Turn Off Time
  • FAP-IIIBH = High Speed Non Logic
  • FAP-IIIB = Logic Level, VGS(th) 1.5 ±0.5 V
  • FAP-G = Ultra Fast Switching
  • F-I Series = Low RDS(ON)
  • F-II Series = VGS ±30 V, Reduced Turn Off Time
  • FAP-II Series = High Avalanche Ruggedness
  • FAP-III = Logic Level, High Avalanche Ruggedness
  • FAP-IIS = VGS ±35 V, VGS(th) 4.0 ±0.5 V
  • FAP-IIA = Reduced Turn Off Time
  • FAP-IIIBH = High Speed Non Logic
  • FAP-IIIB = Logic Level, VGS(th) 1.5 ±0.5 V
  • FAP-G = Ultra Fast Switching

    • 2SK725產品信息

      Application  Switching regulators, UPS, DC-DC converters, general purpose power amplifier  
      Capacitance, Input  2600 pF @ 25 V  
      Channel Mode  Enhancement  
      Channel Type  N  
      Configuration  Single  
      Current, Drain  15 A  
      Current, Drain, Pulse  60 A  
      Dimensions  15.5 x 4.5 x 19.5 mm  
      Height  0.768" (19.5mm)  
      Mounting Type  Through Hole  
      Number of Elements per Chip  1  
      Number of Pins  3  
      Operating and Storage Temperature  +150, -55 to +150 °C  
      Package Type  SC-65  
      Polarization  N-Channel  
      Power Dissipation  125 W  
      Resistance, Drain to Source On  0.38 Ω  
      Resistance, Thermal, Junction to Case  1 °C?W (Max.)  
      Temperature, Operating, Minimum  -55 °C  
      Temperature, Operating, Range  -55 to +150 °C  
      Time, Turn-Off Delay  330 ns  
      Time, Turn-On Delay  130 ns  
      Transconductance, Forward  16 S  
      Voltage, Breakdown, Drain to Source  500 V  
      Voltage, Drain to Source  500 V  
      Voltage, Forward, Diode  1 V  
      Voltage, Gate to Source  ±20 V  
      Width  0.177" (4.5mm)  
    關鍵詞         

    2SK725相關搜索

    Application Switching regulators, UPS, DC-DC converters, general purpose power amplifier  Fuji Semiconductor Application Switching regulators, UPS, DC-DC converters, general purpose power amplifier  MOSFET Transistors Application Switching regulators, UPS, DC-DC converters, general purpose power amplifier  Fuji Semiconductor MOSFET Transistors Application Switching regulators, UPS, DC-DC converters, general purpose power amplifier   Capacitance, Input 2600 pF @ 25 V  Fuji Semiconductor Capacitance, Input 2600 pF @ 25 V  MOSFET Transistors Capacitance, Input 2600 pF @ 25 V  Fuji Semiconductor MOSFET Transistors Capacitance, Input 2600 pF @ 25 V   Channel Mode Enhancement  Fuji Semiconductor Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  Fuji Semiconductor MOSFET Transistors Channel Mode Enhancement   Channel Type N  Fuji Semiconductor Channel Type N  MOSFET Transistors Channel Type N  Fuji Semiconductor MOSFET Transistors Channel Type N   Configuration Single  Fuji Semiconductor Configuration Single  MOSFET Transistors Configuration Single  Fuji Semiconductor MOSFET Transistors Configuration Single   Current, Drain 15 A  Fuji Semiconductor Current, Drain 15 A  MOSFET Transistors Current, Drain 15 A  Fuji Semiconductor MOSFET Transistors Current, Drain 15 A   Current, Drain, Pulse 60 A  Fuji Semiconductor Current, Drain, Pulse 60 A  MOSFET Transistors Current, Drain, Pulse 60 A  Fuji Semiconductor MOSFET Transistors Current, Drain, Pulse 60 A   Dimensions 15.5 x 4.5 x 19.5 mm  Fuji Semiconductor Dimensions 15.5 x 4.5 x 19.5 mm  MOSFET Transistors Dimensions 15.5 x 4.5 x 19.5 mm  Fuji Semiconductor MOSFET Transistors Dimensions 15.5 x 4.5 x 19.5 mm   Height 0.768" (19.5mm)  Fuji Semiconductor Height 0.768" (19.5mm)  MOSFET Transistors Height 0.768" (19.5mm)  Fuji Semiconductor MOSFET Transistors Height 0.768" (19.5mm)   Mounting Type Through Hole  Fuji Semiconductor Mounting Type Through Hole  MOSFET Transistors Mounting Type Through Hole  Fuji Semiconductor MOSFET Transistors Mounting Type Through Hole   Number of Elements per Chip 1  Fuji Semiconductor Number of Elements per Chip 1  MOSFET Transistors Number of Elements per Chip 1  Fuji Semiconductor MOSFET Transistors Number of Elements per Chip 1   Number of Pins 3  Fuji Semiconductor Number of Pins 3  MOSFET Transistors Number of Pins 3  Fuji Semiconductor MOSFET Transistors Number of Pins 3   Operating and Storage Temperature +150, -55 to +150 °C  Fuji Semiconductor Operating and Storage Temperature +150, -55 to +150 °C  MOSFET Transistors Operating and Storage Temperature +150, -55 to +150 °C  Fuji Semiconductor MOSFET Transistors Operating and Storage Temperature +150, -55 to +150 °C   Package Type SC-65  Fuji Semiconductor Package Type SC-65  MOSFET Transistors Package Type SC-65  Fuji Semiconductor MOSFET Transistors Package Type SC-65   Polarization N-Channel  Fuji Semiconductor Polarization N-Channel  MOSFET 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Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  Fuji Semiconductor Temperature, Operating, Range -55 to +150 °C  MOSFET Transistors Temperature, Operating, Range -55 to +150 °C  Fuji Semiconductor MOSFET Transistors Temperature, Operating, Range -55 to +150 °C   Time, Turn-Off Delay 330 ns  Fuji Semiconductor Time, Turn-Off Delay 330 ns  MOSFET Transistors Time, Turn-Off Delay 330 ns  Fuji Semiconductor MOSFET Transistors Time, Turn-Off Delay 330 ns   Time, Turn-On Delay 130 ns  Fuji Semiconductor Time, Turn-On Delay 130 ns  MOSFET Transistors Time, Turn-On Delay 130 ns  Fuji Semiconductor MOSFET Transistors Time, Turn-On Delay 130 ns   Transconductance, Forward 16 S  Fuji Semiconductor Transconductance, Forward 16 S  MOSFET Transistors Transconductance, Forward 16 S  Fuji Semiconductor MOSFET Transistors Transconductance, Forward 16 S   Voltage, Breakdown, Drain to Source 500 V  Fuji Semiconductor Voltage, Breakdown, Drain to Source 500 V  MOSFET Transistors Voltage, Breakdown, Drain to Source 500 V  Fuji Semiconductor MOSFET Transistors Voltage, Breakdown, Drain to Source 500 V   Voltage, Drain to Source 500 V  Fuji Semiconductor Voltage, Drain to Source 500 V  MOSFET Transistors Voltage, Drain to Source 500 V  Fuji Semiconductor MOSFET Transistors Voltage, Drain to Source 500 V   Voltage, Forward, Diode 1 V  Fuji Semiconductor Voltage, Forward, Diode 1 V  MOSFET Transistors Voltage, Forward, Diode 1 V  Fuji Semiconductor MOSFET Transistors Voltage, Forward, Diode 1 V   Voltage, Gate to Source ±20 V  Fuji Semiconductor Voltage, Gate to Source ±20 V  MOSFET Transistors Voltage, Gate to Source ±20 V  Fuji Semiconductor MOSFET Transistors Voltage, Gate to Source ±20 V   Width 0.177" (4.5mm)  Fuji Semiconductor Width 0.177" (4.5mm)  MOSFET Transistors Width 0.177" (4.5mm)  Fuji Semiconductor MOSFET Transistors Width 0.177" (4.5mm)  
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