Capacitance, Input |
3800 pF @ 75 V |
|
Channel Mode |
Enhancement |
|
Channel Type |
N |
|
Configuration |
Single |
|
Current, Drain |
73 A |
|
Dimensions |
15.5 x 5 x 21.5 mm |
|
Gate Charge, Total |
80 nC |
|
Height |
0.846" (21.5mm) |
|
Length |
0.61" (15.5mm) |
|
Mounting Type |
Through Hole |
|
Number of Elements per Chip |
1 |
|
Number of Pins |
3 |
|
Operating and Storage Temperature |
-55 to 150 °C |
|
Package Type |
TO-247 |
|
Polarization |
N-Channel |
|
Power Dissipation |
410 W |
|
Resistance, Drain to Source On |
36 mΩ |
|
Resistance, Thermal, Junction to Case |
0.30499999999999999 °C/W |
|
Temperature, Operating, Maximum |
+150 °C |
|
Temperature, Operating, Minimum |
-55 °C |
|
Temperature, Operating, Range |
-55 to +150 °C |
|
Thermal Resistance, Junction to Ambient |
50 °C/W |
|
Time, Turn-Off Delay |
60 ns |
|
Time, Turn-On Delay |
40 ns |
|
Transconductance, Forward |
24 S |
|
Typical Gate Charge @ Vgs |
80 nC @ 10 V |
|
Voltage, Breakdown, Drain to Source |
200 V |
|
Voltage, Drain to Source |
200 V |
|
Voltage, Forward, Diode |
1.2 V |
|
Voltage, Gate to Source |
±30 V |
|
Voltage, Threshold |
2.5-3.5 V |
|
Width |
0.197" (5mm) |
|
關(guān)鍵詞 |