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2SK3554-01 - 

MOSFET, Power; N-Ch; VDSS 250V; RDS(ON) 75Milliohms; ID +/-37A; TO-220AB; PD 270W; -55

Fuji Semiconductor 2SK3554-01
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制造商產(chǎn)品編號:
2SK3554-01
倉庫庫存編號:
70212461
技術(shù)數(shù)據(jù)表:
View 2SK3554-01 Datasheet Datasheet
訂購熱線: 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
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2SK3554-01產(chǎn)品概述

Features:
  • FAP-III = Logic Level, High Avalanche Ruggedness
  • FAP-IIS = VGS ±35 V, VGS(th) 4.0 ±0.5 V
  • FAP-IIA =Reduced Turn Off Time
  • FAP-IIIBH = High Speed Non Logic
  • FAP-IIIB = Logic Level, VGS(th) 1.5 ±0.5 V
  • FAP-G = Ultra Fast Switching
  • Trench Gate Series = Ultra Low On-Resistance
  • 2SK3554-01產(chǎn)品信息

      Application  Switching regulators, uninterruptible power Supply, DC-DC Converters  
      Capacitance, Input  2000 pF @ 75 V  
      Channel Mode  Enhancement  
      Channel Type  N  
      Configuration  Single  
      Current, Drain  ±37 A  
      Dimensions  10 x 4.5 x 15 mm  
      Gate Charge, Total  44 nC  
      Height  0.591" (15mm)  
      Length  0.393" (10mm)  
      Mounting Type  Through Hole  
      Number of Elements per Chip  1  
      Number of Pins  3  
      Operating and Storage Temperature  -55 to 150 °C  
      Package Type  TO-220AB  
      Polarization  N-Channel  
      Power Dissipation  270 W  
      Resistance, Drain to Source On  100 mΩ  
      Resistance, Thermal, Junction to Case  0.46300000000000002 °C/W  
      Temperature, Operating, Maximum  +150 °C  
      Temperature, Operating, Minimum  -55 °C  
      Temperature, Operating, Range  -55 to +150 °C  
      Thermal Resistance, Junction to Ambient  62 °C/W  
      Time, Turn-Off Delay  60 ns  
      Time, Turn-On Delay  20 ns  
      Transconductance, Forward  16 S  
      Typical Gate Charge @ Vgs  44 nC @ 10 V  
      Voltage, Breakdown, Drain to Source  250 V  
      Voltage, Drain to Source  250 V  
      Voltage, Forward, Diode  1.1 V  
      Voltage, Gate to Source  ±30 V  
      Voltage, Threshold  2.5-3.5 V  
      Width  0.177" (4.5mm)  
    關(guān)鍵詞         

    2SK3554-01相關(guān)搜索

    Application Switching regulators, uninterruptible power Supply, DC-DC Converters  Fuji Semiconductor Application Switching regulators, uninterruptible power Supply, DC-DC Converters  MOSFET Transistors Application Switching regulators, uninterruptible power Supply, DC-DC Converters  Fuji Semiconductor MOSFET Transistors Application Switching regulators, uninterruptible power Supply, DC-DC Converters   Capacitance, Input 2000 pF @ 75 V  Fuji Semiconductor Capacitance, Input 2000 pF @ 75 V  MOSFET Transistors Capacitance, Input 2000 pF @ 75 V  Fuji Semiconductor MOSFET Transistors Capacitance, Input 2000 pF @ 75 V   Channel Mode Enhancement  Fuji Semiconductor Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  Fuji Semiconductor MOSFET Transistors Channel Mode Enhancement   Channel Type N  Fuji Semiconductor Channel Type N  MOSFET Transistors Channel Type N  Fuji Semiconductor MOSFET Transistors Channel Type N   Configuration Single  Fuji Semiconductor Configuration Single  MOSFET Transistors Configuration Single  Fuji Semiconductor MOSFET Transistors Configuration Single   Current, Drain ±37 A  Fuji Semiconductor Current, Drain ±37 A  MOSFET Transistors Current, Drain ±37 A  Fuji Semiconductor MOSFET Transistors Current, Drain ±37 A   Dimensions 10 x 4.5 x 15 mm  Fuji Semiconductor Dimensions 10 x 4.5 x 15 mm  MOSFET Transistors Dimensions 10 x 4.5 x 15 mm  Fuji Semiconductor MOSFET Transistors Dimensions 10 x 4.5 x 15 mm   Gate Charge, Total 44 nC  Fuji Semiconductor Gate Charge, Total 44 nC  MOSFET Transistors Gate Charge, Total 44 nC  Fuji Semiconductor MOSFET Transistors Gate Charge, Total 44 nC   Height 0.591" (15mm)  Fuji Semiconductor Height 0.591" (15mm)  MOSFET Transistors Height 0.591" (15mm)  Fuji Semiconductor MOSFET Transistors Height 0.591" (15mm)   Length 0.393" (10mm)  Fuji Semiconductor Length 0.393" (10mm)  MOSFET Transistors Length 0.393" (10mm)  Fuji Semiconductor MOSFET Transistors Length 0.393" (10mm)   Mounting Type Through Hole  Fuji Semiconductor Mounting Type Through Hole  MOSFET Transistors Mounting Type Through Hole  Fuji Semiconductor MOSFET Transistors Mounting Type Through Hole   Number of Elements per Chip 1  Fuji Semiconductor Number of Elements per Chip 1  MOSFET Transistors Number of Elements per Chip 1  Fuji Semiconductor MOSFET Transistors Number of Elements per Chip 1   Number of Pins 3  Fuji Semiconductor Number of Pins 3  MOSFET Transistors Number of Pins 3  Fuji Semiconductor MOSFET Transistors Number of Pins 3   Operating and Storage Temperature -55 to 150 °C  Fuji Semiconductor Operating and Storage Temperature -55 to 150 °C  MOSFET Transistors Operating and Storage Temperature -55 to 150 °C  Fuji Semiconductor MOSFET Transistors Operating and Storage Temperature -55 to 150 °C   Package Type TO-220AB  Fuji Semiconductor Package Type TO-220AB  MOSFET Transistors Package Type TO-220AB  Fuji Semiconductor MOSFET Transistors Package Type TO-220AB   Polarization N-Channel  Fuji Semiconductor Polarization N-Channel  MOSFET Transistors Polarization N-Channel  Fuji Semiconductor MOSFET Transistors Polarization N-Channel   Power Dissipation 270 W  Fuji Semiconductor Power Dissipation 270 W  MOSFET Transistors Power Dissipation 270 W  Fuji Semiconductor MOSFET Transistors Power Dissipation 270 W   Resistance, Drain to Source On 100 mΩ  Fuji Semiconductor Resistance, Drain to Source On 100 mΩ  MOSFET Transistors Resistance, Drain to Source On 100 mΩ  Fuji Semiconductor MOSFET Transistors Resistance, Drain to Source On 100 mΩ   Resistance, Thermal, Junction to Case 0.46300000000000002 °C/W  Fuji Semiconductor Resistance, Thermal, Junction to Case 0.46300000000000002 °C/W  MOSFET Transistors Resistance, Thermal, Junction to Case 0.46300000000000002 °C/W  Fuji Semiconductor MOSFET Transistors Resistance, Thermal, Junction to Case 0.46300000000000002 °C/W   Temperature, Operating, Maximum +150 °C  Fuji Semiconductor Temperature, Operating, Maximum +150 °C  MOSFET Transistors Temperature, Operating, Maximum +150 °C  Fuji Semiconductor MOSFET Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  Fuji Semiconductor Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  Fuji Semiconductor MOSFET Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  Fuji Semiconductor Temperature, Operating, Range -55 to +150 °C  MOSFET Transistors Temperature, Operating, Range -55 to +150 °C  Fuji Semiconductor MOSFET Transistors Temperature, Operating, Range -55 to +150 °C   Thermal Resistance, Junction to Ambient 62 °C/W  Fuji Semiconductor Thermal Resistance, Junction to Ambient 62 °C/W  MOSFET Transistors Thermal Resistance, Junction to Ambient 62 °C/W  Fuji Semiconductor MOSFET Transistors Thermal Resistance, Junction to Ambient 62 °C/W   Time, Turn-Off Delay 60 ns  Fuji Semiconductor Time, Turn-Off Delay 60 ns  MOSFET Transistors Time, Turn-Off Delay 60 ns  Fuji Semiconductor MOSFET Transistors Time, Turn-Off Delay 60 ns   Time, Turn-On Delay 20 ns  Fuji Semiconductor Time, Turn-On Delay 20 ns  MOSFET Transistors Time, Turn-On Delay 20 ns  Fuji Semiconductor MOSFET Transistors Time, Turn-On Delay 20 ns   Transconductance, Forward 16 S  Fuji Semiconductor Transconductance, Forward 16 S  MOSFET Transistors Transconductance, Forward 16 S  Fuji Semiconductor MOSFET Transistors Transconductance, Forward 16 S   Typical Gate Charge @ Vgs 44 nC @ 10 V  Fuji Semiconductor Typical Gate Charge @ Vgs 44 nC @ 10 V  MOSFET Transistors Typical Gate Charge @ Vgs 44 nC @ 10 V  Fuji Semiconductor MOSFET Transistors Typical Gate Charge @ Vgs 44 nC @ 10 V   Voltage, Breakdown, Drain to Source 250 V  Fuji Semiconductor Voltage, Breakdown, Drain to Source 250 V  MOSFET Transistors Voltage, Breakdown, Drain to Source 250 V  Fuji Semiconductor MOSFET Transistors Voltage, Breakdown, Drain to Source 250 V   Voltage, Drain to Source 250 V  Fuji Semiconductor Voltage, Drain to Source 250 V  MOSFET Transistors Voltage, Drain to Source 250 V  Fuji Semiconductor MOSFET Transistors Voltage, Drain to Source 250 V   Voltage, Forward, Diode 1.1 V  Fuji Semiconductor Voltage, Forward, Diode 1.1 V  MOSFET Transistors Voltage, Forward, Diode 1.1 V  Fuji Semiconductor MOSFET Transistors Voltage, Forward, Diode 1.1 V   Voltage, Gate to Source ±30 V  Fuji Semiconductor Voltage, Gate to Source ±30 V  MOSFET Transistors Voltage, Gate to Source ±30 V  Fuji Semiconductor MOSFET Transistors Voltage, Gate to Source ±30 V   Voltage, Threshold 2.5-3.5 V  Fuji Semiconductor Voltage, Threshold 2.5-3.5 V  MOSFET Transistors Voltage, Threshold 2.5-3.5 V  Fuji Semiconductor MOSFET Transistors Voltage, Threshold 2.5-3.5 V   Width 0.177" (4.5mm)  Fuji Semiconductor Width 0.177" (4.5mm)  MOSFET Transistors Width 0.177" (4.5mm)  Fuji Semiconductor MOSFET Transistors Width 0.177" (4.5mm)  
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