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2SK2646-01 - 

MOSFET, Power; N-Ch; VDSS 800V; RDS(ON) 3.19 Ohms; ID +/-4A; TO-220AB; PD 80W; VGS +/-3

Fuji Semiconductor 2SK2646-01
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制造商產(chǎn)品編號：
2SK2646-01
倉庫庫存編號：
70212517
技術數(shù)據(jù)表：
View 2SK2646-01 Datasheet Datasheet
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2SK2646-01產(chǎn)品概述

800 V Drain-to-Source Voltage, TO-220AB Package, NChannel Silicon Power MOSFET
  • High speed switching
  • Low on-resistance
  • No secondary breakdown

  • F-I Series = Low RDS(ON)
  • F-II Series = VGS ±30 V, Reduced Turn Off Time
  • FAP-II Series = High Avalanche Ruggedness
  • FAP-III = Logic Level, High Avalanche Ruggedness
  • FAP-IIS = VGS ±35 V, VGS(th) 4.0 ±0.5 V
  • FAP-IIA = Reduced Turn Off Time
  • FAP-IIIBH = High Speed Non Logic
  • FAP-IIIB = Logic Level, VGS(th) 1.5 ±0.5 V
  • FAP-G = Ultra Fast Switching
  • F-I Series = Low RDS(ON)
  • F-II Series = VGS ±30 V, Reduced Turn Off Time
  • FAP-II Series = High Avalanche Ruggedness
  • FAP-III = Logic Level, High Avalanche Ruggedness
  • FAP-IIS = VGS ±35 V, VGS(th) 4.0 ±0.5 V
  • FAP-IIA = Reduced Turn Off Time
  • FAP-IIIBH = High Speed Non Logic
  • FAP-IIIB = Logic Level, VGS(th) 1.5 ±0.5 V
  • FAP-G = Ultra Fast Switching

    • 2SK2646-01產(chǎn)品信息

      Application  For switching regulators, UPS, DC-DC converters  
      Brand/Series  FAP-2S Series  
      Capacitance, Input  450 pF @ 25 V  
      Channel Mode  Enhancement  
      Channel Type  N  
      Configuration  Single  
      Current, Drain  ±4 A  
      Current, Drain, Pulse  ±16  
      Dimensions  10 x 4.5 x 15 mm  
      Height  0.591" (15mm)  
      Mounting Type  Through Hole  
      Number of Elements per Chip  1  
      Number of Pins  3  
      Operating and Storage Temperature  -55 to +150 °C  
      Package Type  TO-220AB  
      Polarization  N-Channel  
      Power Dissipation  80 W  
      Resistance, Drain to Source On  4 mΩ  
      Resistance, Thermal, Junction to Case  1.56 °C?W (Max.)  
      Temperature, Operating, Minimum  -55 °C  
      Temperature, Operating, Range  -55 to +150 °C  
      Thermal Resistance, Junction to Ambient  75 °C⁄W  
      Time, Turn-Off Delay  50 ns  
      Time, Turn-On Delay  20 ns  
      Transconductance, Forward  2 S  
      Voltage, Breakdown, Drain to Source  800 V  
      Voltage, Drain to Source  800 V  
      Voltage, Forward, Diode  1 V  
      Voltage, Gate to Source  ±35 V  
      Width  0.177" (4.5mm)  
    關鍵詞         

    2SK2646-01相關搜索

    Application For switching regulators, UPS, DC-DC converters  Fuji Semiconductor Application For switching regulators, UPS, DC-DC converters  MOSFET Transistors Application For switching regulators, UPS, DC-DC converters  Fuji Semiconductor MOSFET Transistors Application For switching regulators, UPS, DC-DC converters   Brand/Series FAP-2S Series  Fuji Semiconductor Brand/Series FAP-2S Series  MOSFET Transistors Brand/Series FAP-2S Series  Fuji Semiconductor MOSFET Transistors Brand/Series FAP-2S Series   Capacitance, Input 450 pF @ 25 V  Fuji Semiconductor Capacitance, Input 450 pF @ 25 V  MOSFET Transistors Capacitance, Input 450 pF @ 25 V  Fuji Semiconductor MOSFET Transistors Capacitance, Input 450 pF @ 25 V   Channel Mode Enhancement  Fuji Semiconductor Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  Fuji Semiconductor MOSFET Transistors Channel Mode Enhancement   Channel Type N  Fuji Semiconductor Channel Type N  MOSFET Transistors Channel Type N  Fuji Semiconductor MOSFET Transistors Channel Type N   Configuration Single  Fuji Semiconductor Configuration Single  MOSFET Transistors Configuration Single  Fuji Semiconductor MOSFET Transistors Configuration Single   Current, Drain ±4 A  Fuji Semiconductor Current, Drain ±4 A  MOSFET Transistors Current, Drain ±4 A  Fuji Semiconductor MOSFET Transistors Current, Drain ±4 A   Current, Drain, Pulse ±16  Fuji Semiconductor Current, Drain, Pulse ±16  MOSFET Transistors Current, Drain, Pulse ±16  Fuji Semiconductor MOSFET Transistors Current, Drain, Pulse ±16   Dimensions 10 x 4.5 x 15 mm  Fuji Semiconductor Dimensions 10 x 4.5 x 15 mm  MOSFET Transistors Dimensions 10 x 4.5 x 15 mm  Fuji Semiconductor MOSFET Transistors Dimensions 10 x 4.5 x 15 mm   Height 0.591" (15mm)  Fuji Semiconductor Height 0.591" (15mm)  MOSFET Transistors Height 0.591" (15mm)  Fuji Semiconductor MOSFET Transistors Height 0.591" (15mm)   Mounting Type Through Hole  Fuji Semiconductor Mounting Type Through Hole  MOSFET Transistors Mounting Type Through Hole  Fuji Semiconductor MOSFET Transistors Mounting Type Through Hole   Number of Elements per Chip 1  Fuji Semiconductor Number of Elements per Chip 1  MOSFET Transistors Number of Elements per Chip 1  Fuji Semiconductor MOSFET Transistors Number of Elements per Chip 1   Number of Pins 3  Fuji Semiconductor Number of Pins 3  MOSFET Transistors Number of Pins 3  Fuji Semiconductor MOSFET Transistors Number of Pins 3   Operating and Storage Temperature -55 to +150 °C  Fuji Semiconductor Operating and Storage Temperature -55 to +150 °C  MOSFET Transistors Operating and Storage Temperature -55 to +150 °C  Fuji Semiconductor MOSFET Transistors Operating and Storage Temperature -55 to +150 °C   Package Type TO-220AB  Fuji Semiconductor Package Type TO-220AB  MOSFET Transistors Package Type TO-220AB  Fuji Semiconductor MOSFET Transistors Package Type TO-220AB   Polarization N-Channel  Fuji Semiconductor Polarization N-Channel  MOSFET Transistors Polarization N-Channel  Fuji Semiconductor MOSFET Transistors Polarization N-Channel   Power Dissipation 80 W  Fuji Semiconductor Power Dissipation 80 W  MOSFET Transistors Power Dissipation 80 W  Fuji Semiconductor MOSFET Transistors Power Dissipation 80 W   Resistance, Drain to Source On 4 mΩ  Fuji Semiconductor Resistance, Drain to Source On 4 mΩ  MOSFET Transistors Resistance, Drain to Source On 4 mΩ  Fuji Semiconductor MOSFET Transistors Resistance, Drain to Source On 4 mΩ   Resistance, Thermal, Junction to Case 1.56 °C?W (Max.)  Fuji Semiconductor Resistance, Thermal, Junction to Case 1.56 °C?W (Max.)  MOSFET Transistors Resistance, Thermal, Junction to Case 1.56 °C?W (Max.)  Fuji Semiconductor MOSFET Transistors Resistance, Thermal, Junction to Case 1.56 °C?W (Max.)   Temperature, Operating, Minimum -55 °C  Fuji Semiconductor Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  Fuji Semiconductor MOSFET Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  Fuji Semiconductor Temperature, Operating, Range -55 to +150 °C  MOSFET Transistors Temperature, Operating, Range -55 to +150 °C  Fuji Semiconductor MOSFET Transistors Temperature, Operating, Range -55 to +150 °C   Thermal Resistance, Junction to Ambient 75 °C⁄W  Fuji Semiconductor Thermal Resistance, Junction to Ambient 75 °C⁄W  MOSFET Transistors Thermal Resistance, Junction to Ambient 75 °C⁄W  Fuji Semiconductor MOSFET Transistors Thermal Resistance, Junction to Ambient 75 °C⁄W   Time, Turn-Off Delay 50 ns  Fuji Semiconductor Time, Turn-Off Delay 50 ns  MOSFET Transistors Time, Turn-Off Delay 50 ns  Fuji Semiconductor MOSFET Transistors Time, Turn-Off Delay 50 ns   Time, Turn-On Delay 20 ns  Fuji Semiconductor Time, Turn-On Delay 20 ns  MOSFET Transistors Time, Turn-On Delay 20 ns  Fuji Semiconductor MOSFET Transistors Time, Turn-On Delay 20 ns   Transconductance, Forward 2 S  Fuji Semiconductor Transconductance, Forward 2 S  MOSFET Transistors Transconductance, Forward 2 S  Fuji Semiconductor MOSFET Transistors Transconductance, Forward 2 S   Voltage, Breakdown, Drain to Source 800 V  Fuji Semiconductor Voltage, Breakdown, Drain to Source 800 V  MOSFET Transistors Voltage, Breakdown, Drain to Source 800 V  Fuji Semiconductor MOSFET Transistors Voltage, Breakdown, Drain to Source 800 V   Voltage, Drain to Source 800 V  Fuji Semiconductor Voltage, Drain to Source 800 V  MOSFET Transistors Voltage, Drain to Source 800 V  Fuji Semiconductor MOSFET Transistors Voltage, Drain to Source 800 V   Voltage, Forward, Diode 1 V  Fuji Semiconductor Voltage, Forward, Diode 1 V  MOSFET Transistors Voltage, Forward, Diode 1 V  Fuji Semiconductor MOSFET Transistors Voltage, Forward, Diode 1 V   Voltage, Gate to Source ±35 V  Fuji Semiconductor Voltage, Gate to Source ±35 V  MOSFET Transistors Voltage, Gate to Source ±35 V  Fuji Semiconductor MOSFET Transistors Voltage, Gate to Source ±35 V   Width 0.177" (4.5mm)  Fuji Semiconductor Width 0.177" (4.5mm)  MOSFET Transistors Width 0.177" (4.5mm)  Fuji Semiconductor MOSFET Transistors Width 0.177" (4.5mm)  
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